If you're a university researcher, you can order the same silicon wafers that are used for manufacturing. These are the most affordable and convenient solutions for research on silicon. Aside from being extremely cheap, they're also a good investment. Then, you can easily start using 1 Inch silicon for your university projects today!
Typical Quote Request:
I need wafers with similar specifications to the one with ID #616 on the website, but with two differences,
I want it to be at least more than 1k Ohm-cm. And if it is in the range of 1kOhm-cm - 60 M Ohm-cm, it would be perfect. Would you please send me the options that we can have for resistivity in this range with their prices so that I can choose which one to order?
Reference #194231 for pricing.
You can buy as few as one wafer or large volumes. We cater to the researcher who needs a high-quality, but affordable substrate to experiment on.
Get Your 1 Inch Silicon Wafer Quote FAST!
A PhD candidate rquested a quote for the following:
We’d like to get a quote for fifty 1 inch silicon wafers with (111)
orientation; or 25 1’’ (111) and 25 1’’ (100).
Please tell me also how much is the minimum amount of Si wafers per order
for p - i - n types (111).
If you have any other Si sales promotion now going on, please let me know,
it doesn’t matter that the wafer’s diameter is not 1’’.
We are going to use these wafers for biosensor applications using FBARs.
Based on your experience, would you recommend any specific kind of Si for
this purposes?
Reference #139187 for specs and pricing.
A posdoc requested the following quote:
"We would like to ask availability of silicon wafers for our Far-IR transmission experiment.
Here is the specification what we need.
Si wafers (100)
-1 inch diameter, undoped, double side polished, 500 um thick, R > 5000 ohm.cm (Higer resistivity is better), Quantity 4
-1 inch diameter, undoped, double side polished, 1000 um thick, R > 5000 ohm.cm, Quantity 4
-3 inches diameter, undoped, double side polished, 500 um thick, R > 5000 ohm.cm, Quantity 2
If you do not have these specifications in your stock, we would like to ask you to recommend alternatives. (doping and polishing have to be the same and the thickness can be thicker than 500 um) Also, if there is mininum unit quantity, we can consider to buy some more."
Reference #223466 for specs and pricing.
University researchers have been using 1 Inch Silicon Wafers for their battery research for many years. 
Fortunately, a low-cost solution is now available for this purpose. Here are some of the ways you can use them. The first is to create your own custom silicon wafers. You can make your own by selecting a material from our catalog. Then, you'll be able to design your own surface.
The second method involves the use of reclaimed Test and Prime 1 Inch Silicon Wafers. Reclaimed wafers are Prime and Test grade silicon that has been treated for reuse. The result is chip-scale specimens that are successfully bonded after the microfabrication process. If you want to save money and have the same quality, you can purchase reclaimed wafers. However, you must check the specifications carefully.
Reclaimed Silicon Wafers are also an affordable way to use these materials for university research. They are Prime or Test grade silicon wafers that have undergone some type of reprocessing. This method can produce chips with similar characteristics as virgin Wafers. These are also cheaper than virgin Test and Prime Wafers. You should be able to find these types of products at most universities, but be sure to check the price before purchasing.
The second method is to grow a thin layer of Thermal Oxide on a silicon wafer. This method requires oxidizing agents and heat to build the nitride layer. The material is commonly used for dielectric materials such as MEMs devices. The best way to get 1 inch Silicon Wafers is to order them from a company that has a large supply. The cost is low, but the benefits are plentiful.
The second method of microfabrication is a passive alignment technique. This method is effective for university research and is a great choice for research that requires a high level of precision. XPS analysis is a great way to create this type of high-precision layer. Moreover, this technique can create a single-crystal silicon wafer. After the microfabrication process, these samples can be used to develop various products and applications.
Using the thermal oxide process, it is possible to produce a thermal oxide layer on a silicon wafer. This technique involves using oxidizing agents and heat. It is most commonly used for dielectric materials and semiconductor devices. Unlike other types of silicon wafers, this method can produce dry thermal oxides. In addition, this method is not only cheaper but is also easier than the others.
Another method involves creating a thermal oxide layer on a silicon wafer. This technique is used for both silicon and graphene. It is also used for MEMs devices. The thermal oxide layer can be applied on one or both sides of the wafer. The latter will reduce the cost of the chip. A thicker layer is more expensive than a thin one. Ultimately, you can choose to have thiner silicon wafers for university research, or a combination of both.
Another option is to use reclaimed wafers. This is a process that can yield chip-scale specimens, and it is much cheaper than buying virgin Test or Prime wafers. It is also possible to buy pre-made silicon ware. There are a number of companies that sell one-inch Silicon Wafers for university research. These companies can produce a wide variety of different types of semiconductors.
You can also purchase reclaimed wafers. Reclaimed silicon wafers are a good alternative to new ones. They are slightly thinner than virgin Test wafers, but can still be used for research projects. They can be very useful for making semiconductor devices. Some of these labs even use them as particle monitors. They can be a good alternative to virgin silicon wafers. These are the best options for university research.
See below for our 1 Inch silicon wafer inventory. Or Buy Online!
Note: Surface - P = Polished, E = Etched, C = AsCut, Ox = Oxide (on that surface); Material - CZ unless noted
| Item | Type/Dopant | Ori | Dia. | Thk (μm) | Polish | Res Ωcm | Specs |
| D975 | N/Ph | [100] | 1" | 475 ±10 | E/E | FZ >500 {1,900-2,400} | NO Flats, Soft cst |
| G519 | N/Ph | [111] ±0.5° | 1" | 280 | P/P | FZ 2,000-10,000 | NO Flats, TTV<5μm, Soft cst |
| 7104 | Undoped | [100] | 1" | 300 | P/P | FZ >20,000 | Prime, NO Flats, Soft cst |
| D355 | Undoped | [100] | 1" | 320 | P/E | FZ >20,000 | Prime, NO Flats, Soft cst |
| 5447 | Undoped | [100] | 1" | 500 | P/E | FZ >20,000 | SEMI Prime, 1Flat, hard cst |
| 6926 | Undoped | [100] | 1" | 525 | P/P | FZ >20,000 | Prime, NO Flats, Soft cst |
| I745 | Undoped | [100] | 1" | 160 | P/P | FZ >10,000 | Prime, NO Flats, hard cst, TTV<8μm |
| 6446 | Undoped | [100] | 0.5" | 12,700 | C/C | FZ >10,000 | NO Flats, a set of 4 rods sealed in polyehtylene foil |
| 5427 | Undoped | [111] ±0.5° | 1" | 500 | P/P | FZ >15,000 | SEMI Prime, 1Flat, hard cst |
| 1978 | Undoped | [111] ±0.5° | 1" | 1,000 | P/E | FZ 14,000-30,000 | NO Flats, Soft cst, Cassettes of 7, 6, 6 wafers |
| 4427 | Undoped | [111] ±2° | 1" | 27,870 | C/C | FZ >10,000 | Single Crystal Silicon Rod, 0.39" diameter × 27.87±0.1mm |
| 7043 | P/B | [100] | 1" | 800 | P/E | 8-12 | SEMI Prime, 1Flat, Soft cst |
| 6567 | P/B | [100] | 1" | 300 | P/P | 4-6 | SEMI Prime, 1Flat, Soft cst |
| C320 | P/B | [100] | 1" | 100 ±15 | P/P | 1-10 | Prime, NO Flats, in sealed bags of 5 wafers. |
| 5426 | P/B | [100] | 24mm | 300 | P/E | 1-100 | Prime, NO Flats, hard cst |
| 6643 | P/B | [100] | 1" | 300 | P/E | 1-10 | SEMI Prime, 1Flat, Soft cst |
| F631 | P/B | [100] | 24.3mm | 300 | P/E | 1-10 {1.5-1.7} | Prime, NO Flats, hard cst |
| G536 | P/B | [100] | 1" | 300 | P/E | 1-10 | Prime, NO Flats, Soft cst |
| 6166 | P/B | [100] | 1" | 525 ±10 | P/E | 1-30 | Prime, NO Flats, Soft cst, TTV<5μm |
| 6996 | P/B | [100] | 1" | 525 ±10 | P/E | 1-30 | Prime, NO Flats, Soft cassettes of 20 wafers each, TTV<5μm |
| 7146 | P/B | [100] | 28.8 | 525 | P/E | 1-30 | Prime, NO Flats, Soft cst |
| L678 | P/B | [100] | 1" | 3,000 | P/E | 1-50 | Prime, NO Flats, Individual cst, Group of 13 wafers |
| 5092 | P/B | [100] | 1" | 275 | P/E | 0.015-0.020 | SEMI Prime, 1Flat, Soft cst |
| 6879 | P/B | [100] | 1" | 275 | P/E | 0.0022-0.0025 | Prime, NO Flats, Soft cst |
| 6908 | P/B | [100] | 1" | 250 ±10 | P/P | <0.02 | Prime, NO Flats, Soft cst |
| G704 | P/B | [111] ±0.5° | 1" | 50 ±10 | P/P | 1-100 | NO Flats, Soft cst |
| K729 | N/Ph | [100] | 1" | 50 ±10 | P/P | >20 | SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 4 wafers |
| 7216 | N/Ph | [100] | 1" | 280 | P/E | 1-5 | SEMI Prime, 1Flat, Soft cst |
| 6179 | N/Ph | [100] | 1" | 1,500 | P/E | 1-20 | Prime, NO Flats, Soft cst |
| 6595 | N/Ph | [100] | 1" | 525 | P/E | 0.05-0.15 | SEMI, 1Flat, Soft cst |
| 19A2 | N/Ph | [111] | 1" | 330 | P/E | FZ >90 | Prime, NO Flats, hard cst |
| 19I1 | P/B | [100] | 1" | 775 | P/E | 8-12 | SEMI Prime, 1Flat, Soft cst |
| 19D1 | P/B | [100] | 24mm | 300 | P/E | 1-100 | Prime, NO Flats, Soft cst |
| 19J1 | P/B | [100] | 1" | 300 | P/E | 1-10 | Prime, NO Flats, Soft cst |
| 19B1 | P/B | [100] | 1" | 500 | P/E | 1-10 | Ile zostalo ? |
| 19H2 | P/B | [100] | 1" | 275 | P/E | 0.002-0.005 | Prime, NO Flats, hard cst |
| VS1 | N/Ph | [100] | 1" | 50 ±10 | P/P | >20 | SEMI Prime, 1Flat, TTV<5μm, in single wafer trays between clean-room sheets, MOQ 5 wafers |
| 18X2 | N/Ph | [100] | 1" | 300 | P/E | 1-20 | SEMI Prime, 1Flat, hard cst |
| 18Y | N/As | [100] | 1" | 300 | P/P | 0.001-0.005 | Prime, NO Flats, hard cst |
| 18W2 | N/As | [111] | 1" | 380 | P/E | 0.002-0.007 | SEMI Prime, 1Flat, hard cst |
Researcher:
I was wondering if I could get a quote for 2 pieces of 1" Double side polished, High Resistivity Silicon Wafers. We need the wafer to transmit THz wavelengths (1-5 THz).
UniversityWafer, Inc. Quoted and researcher purchased:
Si Item #7104
1" Intrinsic Si:- [100] 300um DSP FZ >20,000 ohm-cm Prime, NO Flats
$Reference #259291
Typically, anodes using silicon nanoparticles add carbon as a conductive additive and binder for increased mechanical stability. They overcome the price and scale barriers for nanowire batteries by offering more mechanical stability and cycle cycles than other silicon electrodes.
Researchers at a large European university have used the following wafer spec in their battery research.
Si Item #3105
25.4mm P/B <100> .01-.05 ohm-cm 500um DSP Test Grade NO flats, COMPLETELY round