Here are just some of the ongoing sales.
Item |
Type/dop |
Orient. |
Diam. |
Thck (μm) |
Pol |
Resistivity Ohm-cm |
TS006 |
P/B |
[100] |
6" |
525 ±15 |
P/E |
MCZ 0.01--0.02 {0.015--0.017} |
SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Non--standard Edge profile, Oxygen=(11--13)ppma, Carbon<1ppma, Empak cst |
TS004 |
P/B |
[100] |
6" |
675 ±15 |
P/E |
MCZ 0.01--0.02 {0.013--0.017} |
SEMI Prime, 1 SEMI Flat 57.5mm @ <011>±0.5°, Oxygen=(3--9)ppma, Carbon<1ppma, Back--side: Acid etch, Empak cst |
TS005 |
P/B |
[100] |
6" |
675 ±15 |
P/E |
MCZ 0.01--0.02 {0.013--0.016} |
SEMI Prime, 1Flat 57.5mm @ <001>±0.5° {not @ <011>}, Oxygen=(3--9)ppma, Carbon<1ppma, Back--side: Acid etch, Empak cst |
K667 |
P/B |
[100] |
6" |
900 |
C/C |
FZ >1,000 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
7038 |
P/B |
[111] ±0.5° |
6" |
875 |
P/E |
FZ >10,000 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
6898 |
P/B |
[111] ±0.5° |
6" |
1,000 |
P/E |
FZ >5,000 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
7208 |
N/Ph |
[100] ±1° |
6" |
1,000 ±50 |
P/P |
FZ >9,500 |
SEMI Prime, 1Flat (57.5mm), Empak cst, Lifetime>6,000μs |
E239 |
N/Ph |
[100] |
6" |
825 |
C/C |
FZ 7,000--8,000 {7,025--7,856} |
SEMI, 1Flat, Lifetime=7,562μs, in Open Empak cst |
F907 |
N/Ph |
[100] |
6" |
3,000 |
P/P |
FZ >4,800 |
SEMI Prime, 1Flat (57.5mm), Individual cst, Lifetime>7,000μs. |
7212 |
N/Ph |
[100] ±1° |
6" |
450 |
P/P |
FZ 4,300--8,300 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
7233 |
N/Ph |
[100] ±1° |
6" |
675 |
P/P |
FZ 4,300--8,300 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
L625 |
N/Ph |
[100--6° towards[111]] ±0.5° |
6" |
625 |
P/E |
FZ >3,500 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
E700 |
N/Ph |
[100--6° towards[111]] ±0.5° |
6" |
675 |
P/P |
FZ >3,500 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
F700 |
N/Ph |
[100--6° towards[111]] ±0.5° |
6" |
790 ±10 |
C/C |
FZ >3,500 |
SEMI, 1Flat, Empak cst |
4982 |
N/Ph |
[100--6° towards[111]] ±0.5° |
6" |
675 |
P/P |
FZ >1,000 |
SEMI Prime, Notch on <010> {not on <011>}, Laser Mark, Empak cst |
D982 |
N/Ph |
[100--6° towards[111]] ±0.5° |
6" |
675 |
BROKEN |
FZ >1,000 |
SEMI notch Broken -- one piece ~50% of wafers other pieces ~20% of wafer, Empak cst |
7122 |
N/Ph |
[100] |
6" |
500 ±10 |
P/P |
FZ 50--70 |
SEMI Prime, 1Flat, Empak cst |
G122 |
N/Ph |
[100] |
6" |
500 ±10 |
P/P |
FZ 50--70 |
SEMI Prime, 1Flat, Empak cst |
5325 |
N/Ph |
[100] |
6" |
725 |
P/P |
FZ 50--70 {57--62} |
SEMI Prime, 1Flat (57.5mm), Lifetime=15,700μs, Empak cst |
7053 |
N/Ph |
[100] |
6" |
2,000 |
P/P |
FZ 50--70 |
SEMI Prime, 1Flat (57.5mm), Cassettes of 10 + 6 wafers |
6883 |
N/Ph |
[100] |
6" |
625 ±5 |
P/P |
FZ 40--90 |
SEMI Prime, 1Flat (57.5mm), Total Thickness Variation TTV <3μm,, Empak cst |
G883 |
N/Ph |
[100] |
6" |
650 ±5 |
P/P |
FZ 40--90 |
SEMI Prime, 1Flat (57.5mm), TTV<3μm,, Empak cst |
F883 |
N/Ph |
[100] |
6" |
675 ±5 |
P/P |
FZ 40--90 |
SEMI Prime, 1Flat (57.5mm), TTV<3μm,, Empak cst |
S5622 |
N/Ph |
[100] |
6" |
1,300 ±10 |
E/E |
FZ 0.01--0.05 |
SEMI notch, Empak cst |
G228 |
N/Ph |
[111] ±0.5° |
6" |
300 ±15 |
BROKEN |
FZ >6,000 |
Test,Broken into a dozen large pieces ranging from 65% of wafer to 5% and small pieces as well |
N445 |
N/Ph |
[112--5.0° towards[11--1]] ±0.5° |
6" |
875 ±10 |
E/E |
FZ >3,000 |
SEMI, 1Flat (47.5mm), TTV<4μm, Surface Chips |
G343 |
N/Ph |
[112--5° towards[11--1]] ±0.5° |
6" |
1,000 ±10 |
C/C |
FZ >3,000 |
SEMI, 1 JEIDA Flat (47.5mm), Empak cst, TTV<4μm, Lifetime>1,000μs |
7116 |
Intrinsic Si:- |
[100] |
6" |
675 |
P/P |
FZ >65,000 |
SEMI notch Prime, Empak cst |
M526 |
Intrinsic Si:- |
[100] ±0.1° |
6" |
720 ±10 |
P/P |
FZ >10,000 |
SEMI Prime, 1Flat (57.5mm), TTV<3μm, Empak cst |
7117 |
Intrinsic Si:- |
[111] ±0.5° |
6" |
875 |
P/P |
FZ >10,000 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
F613 |
P/B |
[110] ±0.5° |
6" |
300 |
P/P |
20--25 |
SEMI TEST -- scratched, can be repolished & thinned for extra fee, 2Flats, in unsealed Empak cst |
G458 |
P/B |
[110] ±0.5° |
6" |
390 ±10 |
C/C |
>10 |
2Flats, Empak cst |
TS002 |
P/B |
[110] ±0.25° |
6" |
625 ±15 |
P/E |
10--20 {11--15} |
SEMI Prime, 1 JEIDA Flat (47.5mm) @ <111>, TTV<3μm, Bow<5μm, Warp<10μm, hard cst |
TS007 |
P/B |
[110] ±0.25° |
6" |
625 ±15 |
P/E |
10--20 {13.6--13.9} |
SEMI Prime, 1 JEIDA Flat 47.5mm @ <111>±0.5°, LaserMark, TTV<2μm, Warp<10μm, Empak cst |
TS072 |
P/B |
[110] ±0.25° |
6" |
625 ±15 |
P/E |
10--20 |
SEMI Prime, 1 JEIDA Flat (47.5mm) @ <111>±0.5°, Laser Mark, TTV<3μm, Bow<5μm, Warp<10μm, Empak cst |
6427 |
P/B |
[110] ±0.5° |
6" |
675 |
P/E |
0.01--0.02 |
Prime, PFlat @ [111]±0.25°, SF @ [111]±5° 109.5° CW from PF, Empak cst |
TS054 |
P/B |
[100] |
6" |
675 |
P/E |
15--25 {16.1--21.7} |
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm |
4980 |
P/B |
[100] |
6" |
220 |
P/P |
10--30 |
SEMI 1Flat (57.5mm), TEST grade (surface scratches & digs), TTV<4μm, Unsealed in Empak cst |
L405 |
P/B |
[100] |
6" |
1,000 |
P/P |
10--15 |
SEMI Prime, 1Flat (57.5mm), Empak cst, 4 Prime wafers plus 2 scratched wafers at no cost |
7066 |
P/B |
[100] |
6" |
675 |
P/P |
5--10 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
6287 |
P/B |
[100] |
6" |
675 |
P/E |
5--10 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
6751 |
P/B |
[100] |
6" |
1,000 |
P/E |
5--10 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
7030 |
P/B |
[100] |
6" |
1,000 |
P/E |
5--10 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
E964 |
P/B |
[100] |
6" |
475 |
P/P |
1--30 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
5964 |
P/B |
[100] |
6" |
500 |
P/P |
1--30 |
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm |
D964 |
P/B |
[100] |
6" |
500 |
P/P |
1--30 |
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<5μm |
5354 |
P/B |
[100--9.7° towards[001]] ±0.1° |
6" |
525 |
P/P |
1--100 |
SEMI Prime, 1Flat (57.5mm) at <110>±0.1°, Empak cst |
B420 |
P/B |
[100] |
6" |
675 |
P/P |
1--5 |
SEMI Prime, 1Flat, Soft cst |
6358 |
P/B |
[100--6° towards[111]] ±0.5° |
6" |
675 |
P/E |
1--30 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
N698 |
P/B |
[100] |
6" |
675 |
P/E |
1--100 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
6404 |
P/B |
[100] |
6" |
800 |
E/E |
1--50 |
SEMI, 1Flat (57.5mm), Empak cst, TTV<5μm |
F162 |
P/B |
[100] |
6" |
2,000 ±50 |
P/P |
1--35 |
SEMI Prime, 1Flat (57.5mm), Individual cst, Group of 6 wafers |
E162 |
P/B |
[100] |
6" |
2,000 ±50 |
P/E |
1--35 |
SEMI Prime, 1Flat (57.5mm), Group of 2 wafers, Back--Side polished with small scratches |
7047 |
P/B |
[100] |
6" |
400 |
P/P |
0.5--1.0 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
S5821 |
P/B |
[100] |
6" |
275 |
P/P |
0.01--0.05 |
SEMI Prime, 1Flat (57.5mm), TTV<2μm, Empak cst |
TS104 |
P/B |
[100] |
6" |
625 ±15 |
P/EOx |
0.01--0.02 {0.0139--0.0144} |
SEMI Prime, JEIDA Flat 47.5mm, Back--side LTO (0.3--0.4)μm, TTV<6μm, Empak cst |
TS055 |
P/B |
[100] |
6" |
675 ±15 |
P/E |
0.01--0.02 {0.0102--0.0133} |
SEMI Prime, 1Flat (57.5mm), Empak cst |
TS103 |
P/B |
[100] |
6" |
525 ±15 |
P/E |
0.007--0.015 {0.0126--0.0134} |
SEMI Prime, 1Flat (57.5mm), TTV<5μm, Empak cst |
6005 |
P/B |
[100] |
6" |
320 |
P/E |
0.001--0.030 |
JEIDA Prime, Empak cst |
6484 |
P/B |
[100] |
6" |
675 |
P/E |
0.001--0.005 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
TS108 |
P/B |
[111--3°] ±0.5° |
6" |
625 ±15 |
P/E |
0.01--0.02 |
SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst |
J668 |
P/B |
[111] ±0.5° |
6" |
675 |
E/E |
0.010--0.025 |
SEMI, 1Flat (57.5mm), Empak cst, TTV<5μm |
TS105 |
P/B |
[111--1.5°] ±0.35° |
6" |
675 |
P/EOx |
0.001--0.002 {0.0017--0.0018} |
SEMI Prime, 1Flat (57.5mm), Back--side LTO 400±40nm, TTV<6μm, Empak cst |
5814 |
N/Ph |
[100] |
6" |
925 ±15 |
E/E |
5--35 {12.5--29.7} |
JEIDA Prime, Empak cst, TTV<5μm |
B728 |
N/Ph |
[100] |
6" |
675 |
P/E |
2.7--4.0 |
SEMI Prime, Empak cst |
TS063 |
N/Ph |
[100] |
6" |
525 |
P/E |
1--3 {1.1--1.5} |
SEMI Prime, 1Flat (57.5mm), Empak cst |
TS075 |
N/Ph |
[100] |
6" |
525 |
P/E |
1--3 {1.5--2.0} |
SEMI Prime, Flat: JEIDA 47.5mm, Oxygen=(10--14)ppma, Carbon<1ppma, Empak cst (14 + 12 wafers) |
TS076 |
N/Ph |
[100] |
6" |
525 |
P/E |
1--3 {1.1--2.3} |
SEMI Prime, Flat: JEIDA 47.5mm, Oxygen=(10--14)ppma, Carbon<1ppma, Empak cst (8+24+25 wafers) |
6971 |
N/Ph |
[100--25° towards[110]] ±1° |
6" |
675 |
P/P |
1--100 |
SEMI notch Prime, Empak cst, TTV<1μm |
6965 |
N/Ph |
[100] |
6" |
675 ±10 |
P/E |
1--10 {4.34--5.36} |
SEMI Prime, 1Flat (57.5mm), Empak cst |
7170 |
N/Ph |
[100] ±1° |
6" |
675 |
P/E |
1--20 {1.8--12.0} |
Prime, 2 SEMI Flats, Back--side Acid etched, Empak cst |
C716 |
N/Ph |
[100--28° towards[110]] ±1° |
6" |
700 |
P/P |
1--100 |
SEMI Notch Prime, TTV<2μm, Empak cst |
S5913 |
N/Ph |
[100] ±1° |
6" |
800 |
P/E |
1--10 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
F859 |
N/Ph |
[100--25° towards[110]] ±1° |
6" |
800 |
C/C |
1--100 |
SEMI notch Prime, Empak cst |
E089 |
N/Ph |
[100] |
6" |
1,910 ±10 |
P/P |
1--100 |
SEMI Prime, 1Flat (57.5mm), TTV<2μm, in stacked trays of 2 wafers |
F089 |
N/Ph |
[100] |
6" |
1,910 ±10 |
P/P |
1--100 |
SEMI Prime, 1Flat (57.5mm), TTV<5μm, sealed in stacked trays of 1 + 3 wafer |
G844 |
N/Ph |
[100] |
6" |
5,000 |
P/P |
1--35 |
SEMI Prime, 1Flat (57.5mm), Individual cst |
L066 |
N/Sb |
[100] |
6" |
675 |
P/E |
0.01--0.02 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
C673 |
N/Sb |
[100] |
6" |
675 |
P/E |
0.008--0.020 |
SEMI Prime, 1Flat (57.5mm), Empak cst |
2533 |
N/As |
[100] |
6" |
1,000 |
L/L |
0.0033--0.0037 |
SEMI, 1Flat(57.5mm), in individual wafer cassettes |
E533 |
N/As |
[100] |
6" |
1,000 |
L/L |
0.0033--0.0037 |
SEMI, 1Flat(57.5mm), in individual wafer cassettes |
TS018 |
N/As |
[100] |
6" |
575 ±15 |
P/P |
0.001--0.005 {0.0040--0.0041} |
SEMI Prime, 2Flats (PF @ <110>±1°, SF 135° from PF}, Laser Mark, Empak cst |
4204 |
N/As |
[100] |
6" |
675 |
P/EOx |
0.001--0.005 |
SEMI Prime, 1Flat (57.5mm), Empak cst, Back--side LTO (0.64--0.666)um, TTV<4μm, Bow/Warp<20μm |
5541 |
N/Ph |
[100] |
6" |
675 |
P/EOx |
0.001--0.002 |
SEMI Prime, 1Flat (57.5mm), with strippable Epi layer Si:P (0.32--0.46)Ohmcm, 3.20±0.16μm thick, Empak cst |
TS101 |
N/As |
[100] |
6" |
675 ±15 |
P/EOx |
0.001--0.005 {0.0036--0.0041} |
SEMI Prime, 1Flat (57.5mm), TTV<5μm, LTO (0.3--0.6)μm, Empak cst |
TS037 |
N/Ph |
[111--1.5°] ±0.5° |
6" |
675 |
P/E |
3--12 {5.0--8.8} |
SEMI Prime, 1Flat (57.5mm), Empak cst |
6559 |
N/Ph |
[111] ±0.5° |
6" |
675 |
P/E |
1--100 |
Prime, NO Flats, Empak cst |
TS112 |
N/As |
[111--4°] ±0.5° |
6" |
508 |
P/E |
0.0038--0.0042 |
SEMI Prime, 1Flat (57.5mm), Back--side: LTO 600nm thick, Empak cst |
TS034 |
N/As |
[111--4°] ±0.25° |
6" |
625 ±15 |
P/EOx |
0.0024--0.0035 {0.0029--0.0030} |
SEMI Prime, 1Flat (57.5mm), Back--side: LTO 600nm thick, Empak cst |
TS109 |
N/As |
[111--4°] ±0.5° |
6" |
508 ±15 |
P/E |
0.0023--0.0026 |
SEMI Prime, 1Flat (57.5mm), TTV<8μm, Empak cst |
TS102 |
N/As |
[111--4°] ±0.5° |
6" |
675 |
P/E |
0.001--0.005 |
SEMI Prime, 1Flat (57.5mm), Empak cst, TTV<4μm, Bow<10μm, Warp<20μm |
TS107 |
N/As |
[111--2.5°] ±0.5° |
6" |
625 ±15 |
P/EOx |
0.001--0.004 {0.0021--0.0036} |
SEMI Prime, JEIDA Flat (47.5mm), Back--side LTO (0.45--0.55)μm, TTV<6μm, Empak cst |
Several manufacturers have begun developing six-inch wafers and eight-inch wafers. While these large sized silicon wafers are cheaper to produce, they are still expensive and aren't yet mainstream. Moreover, they are of lower quality than their four-inch counterparts. While they can be used to produce diodes, they are not yet as effective as their four-inch counterparts. Here's how to make the most of these large sized wafers.
First, we need to determine the optimal orientation of silicon wafers for semiconductor production. Choosing the right orientation will maximize the efficiency of the semiconductor and produce the highest quality products. Secondly, we need to make sure that the wafers we purchase are compatible with our manufacturing process. After all, we're going to use them in semiconductor devices. In order to get the best results, we need to choose the best wafer size for our process.
Second, we must examine the mechanical damage of silicon wafers. After rough grinding, surface roughness is 0.15 m. After fine grinding, it is 0.016 m. We also need to determine warpage, which is between sixty and ninety m. Third, we need to determine the thickness of the layered silicon. These measurements should be carried out on a 6-inch silicon-based wafer.
Lastly, we need to identify the type of silicon wafer we want. The best silicon wafers are mirror-like and have uniform surfaces. If the surface is not mirror-like, we can't use them for our projects. The size of the silicon wafers that we use in our manufacturing processes must be as uniform as possible. For instance, a 6 inch silicon-based semiconductor is the best choice if we want to improve performance and reduce cost.
The photoresists used in semiconductor fabrication are g-line photoresists, i-line photoresists, and EUV-V-photoresists. These photoresists are available in different sizes and types, depending on the material used. The most common types of these materials are silicon annealed. In this study, we examine the etching process for 6-inch polycrystalline silicon wafers.
The process of cleaving a silicon wafer can vary. The process of cleaving depends on the size of the wafer. Basically, the larger the silicon, the easier it is to cleave. For example, the process of cleaving is faster with larger silicon wafers. The cleft is the cutoff edge of the silicon. In this case, the entire chip is sliced into smaller pieces.
During the process of manufacturing 6 inch silicon wafers, it is important to select the proper orientation for the silicon wafer. Optimal orientation will help maximize the efficiency of the semiconductor. If the silicon wafer has the correct orientation, it will be compatible with the entire process. Therefore, it is important to choose the correct orientation for the silicon wafer. If the silicon wafer has the right orientation, it will produce the best products.
The process of making 6 inch silicon wafers is a relatively simple one. The process is highly efficient, allowing for more precision and uniformity in the final product. A good silicon wafer can be processed quickly and efficiently. Typically, a silicon wafer costs between $160 and $150 and $500. A 6 inch wafer is a good example of this. It has many advantages. It is an excellent choice for semiconductor manufacturing.
The manufacturing process for producing 6 inch silicon wafers is very precise. The process also requires an enormous investment to produce the wafers. As a result, a six-inch silicon safer is more expensive than a one-inch wafer. However, it is worth it because it allows for more flexibility during machining. Besides, it is more efficient than a three-inch-wide one.