76.2mm Silicon Wafers (3 inch) for Research & Production

university wafer substrates

76.2mm Silicon Wafers

A postdoc requested a quote for their microfluidic device research:

 "I’m currently working on a budget for microfluidic device which uses 75mm silicon wafers. I’m not sure of what perimeters would be needed for those."

Click here for our answer.

We can thin, deposit oxide, nitride, metals, etch. We can dice and have ingots. Please let us know what you need?

76.2mm wafers are great for research as they cost less than larger diameter wafers.

Get Your 76.2mm Silicon Quote FAST!

Polished Silicon Wafers from UniversityWafer Used in Plasma Etching on Microfluidic Devices

For research conducted by individuals from the Netherlands, they used our 76.2 mm pure polished silicon wafers. These wafers were meant to be used as silicon masters. These masters were set up for PDMS and were used with a standard UV-lithography set-up. Ask about the photomasks.

EXPERIMENTAL SECTION General.

Chemicals were purchased from Sigma Aldrich/Merck unless mentioned otherwise. Menzel-Gläser borosilicate glass microscope slides were used to fabricate the microfluidic device and were purchased from Thermo Scientific. Hyper pure polished silicon wafers (76.2 mm diameter, purchased from University Wafer, USA) were used as silicon masters. A photomask template containing patterns, with different feature and spacing sizes, was designed and ordered from JD photo data (UK). Deionized (DI) water was used in all the experiments. Cyanine 5-diadamantane (Cy5-Ad2) was synthesized by Dr. Mark Rood from the Interventional Molecular Imaging lab at the Leiden University Medical Centre (LUMC, Leiden, the Netherlands).1

Publication

76.2 mm to inches

3 inches is exactly 76.2mm in diameter, if you were curious!

What Silicon Wafer Should I use in my Optics, as a Beamsplitter for Terahertz Radiation Research?

Researcher asks:

Solution:

Si Item #R499 Qty 25
76.2mm P/B [100] 380um DSP 1-10 ohm-cm SEMI Prime, 2Flats, Empak cst, TTV<5μm

Silicon Wafers for Scanning Electron Microscope Analysis

Companies use the following substrate for scanning electron microscope analysis.

Si Item #695 - 76.2mm N/P <100> 1-10 ohm-cm 380um SSP Prime Grade

What Silicon Wafers are Used in Nanoelectrodes for DNA Research

The microelectrode sensor devices were fabricated on a the following silicon wafer 76.2mm N/Ph (100) 0.004-0.01 ohm-cm with 200nm dry thermal oxide

----------------------------------------------

Cell Sequence and Mitosis Affect Fibroblast Directional Decision-Making During Chemotaxis in Microfluidic Mazes

In this study, researchers showed that cell sequence and mitosis affect fibroblast directional decision. They observed that the polarity of cells varies depending on their situation, and that opposite path choices are more frequent for the first cell. The same behavior is observed when cells encounter a symmetric bifurcation, as they encounter multiple simultaneous cues during migration.

The Scientists used the following Wafer.

Buy Online Si Item #447 Silicon Wafer
76.2mm P B <100> 0-100 ohm-cm 406-480um SSP Test Grade Qty 10

76.2mm Substrate for Microfluidic Device Research

Answer:

If you are doing micro-fluidic devices then presumably you etch in silicon wafers various channels, membranes, orifices, cantilevers, etc. The properties of the required wafers, depend on the etching process used.

Here are some parameters that you should consider and specify:

  1. Standard wafer diameter is 76.2±0.5mm - I you must have 75mm diameter then specify diameter and tolerance.
  2. Specify wafer thickness - 380±25µm is standard
  3. Specify Silicon dopant and resistivity - If you specify that the wafers be "undoped" that implies that they are of very high purity and resistivity (Resistivity is a measure of purity - the higher the resistivity, the purer the silicon, the higher the cost) - so do not do that. Generally, you should specify Resistivity as (1-100) Ohm-cm. If your etching process depends on electro-chemical properties of the Silicon then you need to specify Boron doped Silicon (p-type) or Phosphorus doped Silicon (n-type). If your etching process is not sensitive to Silicon conductivity type then state "Doping immaterial" rather than "Undoped".
  4. If you use an etching process which which depends on p-type to n-type transition as the etch stop, then you may want to specify Silicon Epi wafers where the substrate is p-type and the Epi layer is n-type (or vice-versa). Epi layer can be anywhere form 5 to 150µm thick.
  5. If you use anisotropic etch (as is most common) then you need to specify Crystallographic orientation of the silicon wafer surface - (100) orientation is most commonly used, but you may need (110) orientation wafers for etching deep trenches with perpendicular walls.
  6. Generally Single-side polished wafers are adequate (but double-side-polished wafers are also available, if you intend to use both sides of the Silicon wafer). Surface roughness is normally about 1nm on rms basis. This is a result of the CMP polishing process used and is not measured so you should not attempt to specify it. Total Thickness Variation (TTV) relates to how well one can focus on the wafers and so how fine details you can etch. TTV<10µm is standard, TTV<5µm is extra quality, TTV<1µm is possible but very expensive. TTV relates to wafer thickness and presupposes that the wafer is used clamped to a flat reference surface (as is normal). If wafer is used "free-standing", so it rests on a flat reference surface touching it at just 3 points, then the Bow and Warp parameters are significant. For 3"Ø wafers Warp<30µm is standard (Bow is generally half of Warp although they are normally specified as the same, for example Bow/Warp<30µm), anything less incurs extra cost.
  7. Silicon is normally crystallized by the CZ process. This results in dissolved Oxygen content of about 20ppma. Some etch processes are sensitive to Oxygen content. In that case you may consider using FZ crystallized Silicon with dissolved Oxygen < 1ppma, but FZ Silicon is more expensive.

There are many other things that one can specify about Silicon wafers, but fhr MEMS and micro-fluidics above are probably most significant.

76.2mm (3 Inch) Silicon Wafers

We have a large selection of 76.2mm Si wafers in stock and ready to ship. Please fill out the form if you need other specs and quantity.

Item Dia. Typ/Dop Ori. Thck(μm) Pol Res Ωcm Specs

SEMI Prime, 2Flats, Empak cst
4996 3" P/B [110] ±0.5° 325 SSP FZ 100-200  
5865 3" P/B [100] 380 SSP FZ 7,000-10,000  
6510 3" P/B [100] 350 DSP FZ 1-5 Lifetime >1,500μs
S5901 3" P/B [100] 584 E/E FZ 0.5-10.0  
L978 3" P/B [111] ±0.5° 380 SSP FZ 8,000-10,000  
M942 3" P/B [111] ±0.5° 475 SSP FZ >4,400 TTV<5μm
S5554 3" P/B [111] ±0.25° 400 SSP FZ >100  
G529 3" N/Ph [100] 380 DSP FZ 7,000-18,000  
I642 3" N/Ph [100] 380 DSP FZ 5,000-8,000  
4994 3" N/Ph [100] ±0.1° 380 SSP FZ >5,000  

Prime, NO Flats, Individual cst
H138 3" N/Ph [100] 6,000 DSP FZ >5,000  
B215 3" N/Ph [100] 381 DSP FZ 100-500  
C215 3" N/Ph [100] 381 DSP FZ 100-500  
4210 3" N/Ph [100] 525 E/E FZ 100-500  
3421 3" N/Ph [100] 300 DSP FZ 45-52  
F421 3" N/Ph [100] 300 DSP FZ 45-52  
E421 3" N/Ph [100] 380 SSP FZ 45-52  
7059 3" N/Ph [100] 850 SSP FZ 40-140  
6509 3" N/Ph [100] 350 DSP FZ 1-5 Lifetime>1,000μs
4987 3" N/Ph [100] 300 DSP FZ 0.8-2.5 Lifetime >7,000μs
C987 3" N/Ph [100] 300 SSP FZ 0.8-2.5 Epi-Ready
5753 3" N/Ph [211-5°] ±0.5° 508 DSP FZ >50  
5750 3" N/Ph [211-5°] ±0.5° 508 DSP FZ 25-75  
5752 3" N/Ph [211-5°] ±0.5° 508 DSP FZ 25-75  
5755 3" N/Ph [211-5°] ±0.5° 508 DSP FZ 25-75  
5756 3" N/Ph [211-5°] ±0.5° 508 DSP FZ 25-75  
5757 3" N/Ph [211-5°] ±0.5° 508 DSP FZ 25-75  
5758 3" N/Ph [211] ±0.5° 508 DSP FZ 25-75  
5754 3" N/Ph [211] ±0.5° 1,016 DSP FZ 25-75  
5759 3" N/Ph [211] ±0.5° 1,016 DSP FZ 25-75  
5760 3" N/Ph [211] ±0.5° 1,016 DSP FZ 25-75  
G116 3" N/Ph [111] ±0.5° 415 ±15 E/E FZ 10,000-12,000 Lifetime>1,500μs
5707 3" N/Ph [111] ±0.5° 370 SSP FZ >5,000 1 Flat
I707 3" N/Ph [111] ±0.5° 370 SSP FZ >5,000  
E116 3" N/Ph [111] ±0.5° 415 ±15 E/E FZ 5,000-7,400 MCC Lifetime>1,500μs
F264 3" N/Ph [111] ±0.5° 675 DSP FZ >5,000 TTV<4μm, Lifetime>800μs
3273 3" N/Ph [111] ±0.5° 1,000 SSP FZ >5,000  
I978 3" N/Ph [111] ±0.5° 380 SSP FZ 4,000-8,000  
K978 3" N/Ph [111] ±0.5° 380 BROKEN FZ 4,000-8,000  
3786 3" N/Ph [111] ±0.5° 380 DSP FZ 3,000-5,000  
E383 3" N/Ph [111] ±0.5° 380 SSP FZ 3,000-5,000 Lifetime>1,000μs,
2116 3" N/Ph [111] ±0.5° 415 ±15 E/E FZ 2,000-5,000 Lifetime>1,500μs
S5612 3" N/Ph [111] ±1° 508 E/E FZ 182-196 TTV<3μm
7200 3" Undoped [100] 300 ±10 DSP FZ >20,000 TTV<5μm
E181 3" Undoped [100] 350 DSP FZ >20,000 TTV<5μm
G280 3" Undoped [100] 350 DSP FZ >20,000 TTV<1μm
F280 3" Undoped [100] 380 DSP FZ >20,000 TTV<5μm
K834 3" Undoped [100] 380 SSP FZ >20,000 unpolished
6975 3" Undoped [100] 500 DSP FZ >20,000  
S212 3" Undoped [100] 500 DSP FZ >20,000  
W073 3" Undoped [100] 675 DSP FZ >10,000 TTV<5μm
6101 3" Undoped [100] 4,000 DSP FZ >8,000 Individual cst
J593 3" Undoped [111] ±0.5° 380 DSP FZ >20,000 Lifetime>1,460μs
K593 3" Undoped [111] ±0.5° 380 DSP FZ >20,000 Lifetime>1,460μs
D809 3" Undoped [111] ±0.5° 380 SSP FZ >20,000  
E551 3" Undoped [111] ±0.5° 380 SSP FZ >20,000  
7396 3" Undoped [111] ±0.5° 380 SSP FZ >20,000  
7185 3" Undoped [111] ±0.5° 1,975 DSP FZ >20,000 1Flat, Individual cst
D048 3" Undoped [111] ±0.5° 1,975 DSP FZ >20,000 NO Flats,
L730 3" Undoped [111] ±0.5° 350 DSP FZ >15,000 TTV<5μm
K730 3" Undoped [111] ±0.5° 350 DSP FZ >15,000 TTV<5μm

SEMI Prime, Primary Flat @ [111], Secondary @ [111] 70.5° from Primary
I667 3" P/B [110] ±0.5° 380 SSP >100  
5928 3" P/B [110] 750 SSP >100  
1988 3" P/B [110] ±0.5° 380 SSP >60  
S5806 3" P/B [110] ±0.5° 860 E/E 15-50  

SEMI Prime, 2Flats @[111] 109.5° apart
3780 3" P/B [110] ±0.25° 380 SSP 2--4  
4154 3" P/B [110] ±0.5° 360 DSP 1--10 TTV<1μm
H173 3" P/B [110] ±0.5° 381 SSP 0.085-0.115  
2714 3" P/B [110] ±0.3° 381 SSP 0.0448-0.0672  
G714 3" P/B [110] ±0.3° 381 SSP 0.0448-0.0672  
E455 3" P/B [110] ±0.5° 381 SSP 0.003-0.005  
7061 3" P/B [100] 380 DSP 10--20  
6515 3" P/B [100] 250 DSP 1--20 TTV<5μm
K342 3" P/B [100] 300 DSP 1-100  
G286 3" P/B [100] 375 SSP 1-100 {1.6-5.5} TTV<4μm,
6499 3" P/B [100] 380 DSP 1--10  
6930 3" P/B [100] 380 DSP 1--10  
C930 3" P/B [100] 380 DSP 1--10 TTV<5μm
R499 3" P/B [100] 380 DSP 1--10 TTV<5μm
6325 3" P/B [100] 380 SSP 1--10  
D310 3" P/B [100-0.2° towards[011]] ±0.1° 380 ±15 SSP 1-100  
X164 3" P/B [100] 380 SSP 1--20  
S5865 3" P/B [100-6° towards[110]] ±0.5° 381 SSP 1--10  
S5880 3" P/B [100-6° towards[110]] ±0.5° 381 SSP 1--10  
Y164 3" P/B [100] 381 SSP 1--10  
6826 3" P/B [100] 475 DSP 1---50 TTV<0.3μm
P343 3" P/B [100] 500 DSP 1-100 Prime, Empak cst
O344 3" P/B [100] 600 DSP 1-100 Prime, Empak cst
P344 3" P/B [100] 600 DSP 1-100  
K056 3" P/B [100] 5,000 SSP 20-Jan Individual cst
4394 3" P/B [100] 300 DSP 0.5-10.0 TTV<2μm
S5853 3" P/B [100] 315 DSP 0.5-10.0 TTV<3μm
S5610 3" P/B [100] 890 ±13 DSP 0.5-10.0 TTV<8μm
T206 3" P/B [100] 3,050 ±50 C/C >0.5 Individual cst
3014 3" P/B [100] 250 SSP 0.15-0.20  
J014 3" P/B [100] 250 BROKEN 0.15-0.20  
H558 3" P/B [100] 356 DSP 0.015-0.020  
S5843 3" P/B [100-4° towards[110]] ±0.5° 230 SSP 0.01-0.02 TTV<5μm
2248 3" P/B [100] 300 SSP 0.01-0.02  
4989 3" P/B [100] 380 DSP 0.01-0.02  
5862 3" P/B [100] 380 DSP 0.01-0.02  
G989 3" P/B [100] 380 DSP 0.01-0.02  
5907 3" P/B [100] 380 SSP 0.01-0.02  
7140 3" P/B [100] 380 SSP 0.01-0.02  
S5844 3" P/B [100-4° towards[110]] ±0.5° 381 SSP 0.01-0.02 TTV<5μm
S5801 3" P/B [100] 435 ±10 E/E 0.01-0.02 {0.011-0.013} TTV<2μm, coin roll
S5795 3" P/B [100] 450 ±10 E/E 0.01-0.02  
6701 3" P/B [100] 100 DSP 0.0026-0.0030  
7056 3" P/B [100] 100 DSP 0.0026-0.0030  
TS129 3" P/B [100] 381 SSP 0.002-0.005 {0.0032-0.0041} TTV<5μm, Empak
TS130 3" P/B [100] 381 SSP 0.002-0.005 {0.0037-0.0039} TTV<7μm
D414 3" P/B [100] 380 DSP 0.001-0.005  
6414 3" P/B [100] 380 SSP 0.001-0.005  
D750 3" P/B [100] 420 DSP <1  TTV<1μm
3366 3" P/B [5,5,12] ±0.5° 380 SSP 1--10  
D331 3" P/B [211] ±0.5° 525 SSP >10  
2335 3" P/B [111-28° towards[001]] ±0.5° 400 SSP >20  Primary Flat @ <112>
7353 3" P/B [111-4°] ±0.5° 380 SSP 8--12  
H498 3" P/B [111-4°] ±0.5° 380 SSP 8--12  
6944 3" P/B [111] ±0.5° 2,000 DSP 8--9  
6949 3" P/B [111] 2,300 DSP 4--7  
S5800 3" P/B [111] ±0.5° 508 E/E 0.792-1.008 TTV<2μm
TS052 3" P/B [111] ±1° 400 ±19 SSP 0.0436-0.0590 {0.0437-0.0446} TTV<3μm
H120 3" P/B [111-4°] ±0.5° 381 SSPOx 0.01-0.02 {0.0145-0.0148}  
6464 3" P/B [111-4.0° towards[112]] ±0.5° 406 SSP 0.005-0.015  
7157 3" P/B [111] ±0.5° 600 DSP 0.005-0.020  
6722 3" P/B [111-3.5°] 300 SSP 0.004-0.005 TTV<5μm
TS042 3" P/B [111-3°] ±0.5° 381 SSP 0.004-0.008 {0.0049-0.0058}  
S5909 3" P/B [111-4° towards[-211]] ±0.5° 890 SSP 0.001-0.005  
G046 3" N/Ph [510] ±0.5° 1,000 SSP 5--10 NO Flats
F092 3" N/Ph [110] ±0.5° 381 SSP 11--15 TTV<15μm
C720 3" N/Ph [110] ±0.5° 381 SSP 1--10 SEMI Flat (one) @ [1,-1,0]
B788 3" N/As [110] ±0.5° 420 DSP 0.001-0.007  
S5580 3" N/Ph [100] ±1° 2,286 ±13 DSP 15-28 TTV<1μm
7071 3" N/Ph [100] 300 DSP 10--30  
C384 3" N/Ph [100] 300 DSP 10--30  
7164 3" N/Ph [100] 500 ±15 SSP 6--9  
S5824 3" N/Ph [100] ±1° 300 ±10 DSP 5--15 TTV<1μm
6380 3" N/Ph [100] 381 SSP 5--15 TTV<5μm
7263 3" N/Ph [100] 381 SSP 5--15 TTV<5μm
6366 3" N/Ph [100] 1,500 SSP 5--7  
6711 3" N/Ph [100] 250 DSP 2--20 TTV<5μm
6026 3" N/Ph [100] 350 DSP 1--5  
6400 3" N/Ph [100] 350 DSP 1--25 TTV<1μm
6818 3" N/Ph [100] 381 DSP 1--30 TTV<1μm
E252 3" N/Ph [100] 381 DSP 1--30 TTV<1μm
N150 3" N/Ph [100] 381 DSP 1--5 TTV<5μm, Bow/Warp<10μm
S5856 3" N/Ph [100-4°] ±0.5° 500 SSP 1--20  
1547 3" N/Ph [100] 1,000 DSP 1--5  
6741 3" N/Ph [100] 1,000 SSP 1--20  
7307 3" N/Ph [100] 5,000 SSP 1-100  
6308 3" N/Ph [100] 6,000 SSP 1--20  
S5921 3" N/Ph [100] 7,620 ±100 SSP 1--10  
J763 3" N/Sb [100] 300 SSP 0.02-0.04  
4200 3" N/Sb [100] 381 SSP 0.008-0.020 {0.013-0.019}  
TS136 3" N/As [100] ±1° 381 SSP 0.002-0.004 {0.0028-0.0036} TTV<7μm
U156 3" N/As [100] 300 SSP 0.001-0.005  
4096 3" N/As [100] 380 SSPOx 0.001-0.005 LTO Back-side seal 0.5μm
6354 3" N/As [100] 380 SSP 0.001-0.005 TTV<5μm
TS041 3" N/As [100] 889 SSPOx 0.001-0.005 {0.0028-0.0037} LTO 500nm
TS079 3" N/As [100] 889 SSPOx 0.001-0.005 {0.0028-0.0037} LTO 500nm thick, Empak cst
1912 3" N/As [211] ±0.5° 550 E/E 0.0030-0.0042  
2707 3" N/Ph [111-4°] ±0.5° 250 SSP 50-220 {61-95} NO Flats
5721 3" N/Ph [111] ±0.5° 1,500 DSP 31-35  
1263 3" N/Ph [111] ±0.5° 1,400 SSP 25-35  
H136 3" N/Ph [111] 10,000 SSP 20-60  
G271 3" N/Ph [111] ±0.5° 500 SSP >10  
6198 3" N/Ph [111] 3,000 SSP 10--20  
E206 3" N/Ph [111-5° towards[110]] ±0.25° 1,000 SSP >5  
G206 3" N/Ph [111-5° towards[110]] ±0.25° 1,000 SSP >5  
1207 3" N/Ph [111-5° towards[110]] ±0.25° 1,300 SSP >5  
S5804 3" N/Ph [111-0.5° towards[110]] ±0.25° 1,400 E/E >5 LaserMark
S5552 3" N/Ph [111] ±0.5° 380 SSP 1--10  
D917 3" N/Ph [111-3.0°] ±1° 381 SSP 1-20 {1.7-5.7}  
TS001 3" N/Ph [111-3.0°] ±1° 381 SSP 1-20 {3-8} TTV<5μm, Bow<8μm, Warp<16μm
S5842 3" N/Ph [111] ±0.5° 570 DSP 1--10  
TS132 3" N/Ph [111] ±0.5° 525 C/C 0.5-50.0 {0.89-0.98}  
F136 3" N/Ph [111] ±0.5° 1,000 DSP 0.5-2.0  
2256 3" N/Sb [111] ±0.5° 380 SSP 0.019-0.026  
4296 3" N/Sb [111] 380 SSP 0.008-0.025  
TS024 3" N/Sb [111-3.5°] ±0.5° 381 SSP 0.008-0.016 {0.0142-0.0155} TTV<5μm
TS131 3" N/Sb [111-3.5°] ±0.5° 381 SSP 0.008-0.016 {0.0118-0.0133} TTV<6μm
S5845 3" N/Sb [111] ±0.5° 380 SSP 0.01-0.02  
TS025 3" N/Sb [111-2.5°] ±0.5° 381 SSP 0.005-0.016 {0.0125-0.0130} TTV<5μm
TS070 3" N/Sb [111-2.5°] ±0.5° 381 SSP 0.005-0.016 TTV<5μm
TS056 3" N/Sb [111-1.5°] ±0.5° 700 SSP 0.005-0.018 {0.0154-0.0172}  
TS022 3" N/As [111-3°] ±0.5° 381 SSP 0.002-0.004 {0.0025-0.0028} TTV<5μm
TS133 3" N/As [111-3°] ±0.5° 381 SSP 0.002-0.004 {0.0023-0.0028}  
6431 3" N/As [111] ±0.5° 320 DSP 0.001-0.005 TTV<5μm
6385 3" N/As [111] ±0.5° 380 SSP 0.001-0.005 , TTV<5μm
6530 3" N/As [111] ±0.5° 380 SSP 0.001-0.005 TTV<6μm
E380 3" N/As [111-4°] ±0.5° 380 SSP 0.001-0.005  
F385 3" N/As [111-4°] ±0.5° 380 SSP 0.001-0.005 TTV<5μm
G385 3" N/As [111] ±0.5° 380 SSP 0.001-0.005 TTV<5μm
TS023 3" N/As [111-3°] ±0.5° 381 SSP 0.0010-0.0045 {0.0027-0.0037}  
TS026 3" N/As [111-2.5°] ±0.5° 381 SSP 0.001-0.005 {0.0030-0.0032} TTV<5μm
TS071 3" N/As [111-2.5°] ±0.5° 381 SSP 0.001-0.005 TTV<5μm
TS134 3" N/As [111-3°] ±0.5° 381 SSP 0.001-0.005 {0.0033-0.0035} TTV<6μm
TS135 3" N/As [111-3°] ±0.5° 381 SSP 0.001-0.005 {0.0036-0.0042}  
TS046 3" N/As [111-4°] 889 SSPOx 0.001-0.004 {0.0032-0.0035} Back-side: LTO 500nm
S5858 3" N/As [112-3° towards[111]] ±0.5° 890 SSP 0.002-0.003  
D158 3" N/As [225] 300 SSP 0.001-0.003  
1855 3" P/B [100] 380 OxSSPOx 10--20 DRY Thermal Oxide (5-7)nm
3185 3" P/B [100] 500 OxDSPOx 0.01-0.02 Thermal Oxide 1.0μm±5% thick
S5777 3" Si ??? ? DSP ?  
S5778 3" Si ??? ? DSP ?