What are Boron Doped Substrates?

university wafer substrates

Researcher Using Boron Doped Silicon Wafers

A professor requested a quote for the following:

I am an Assistant Professor and would like to investigate regarding an epi-order. We're interested in the following wafer structure : - Substrate : Boron doped, 625 um (or any other suitable thickness), 0.01 ohm-cm - 1st epi layer : Phosphorous doped, 10um, 0.1 ohm-cm - 2nd epi layer : Phosphorous doped, 120 um, 90 ohm-cm Wafer diameter : Either 4" or 6" Would this be something that your company would be able to provide please?

Reference #267654 for specs and pricing.

Get Your Quote FAST! Buy Online and start researching today!

Company:

 

 

 

5 Boron-Doped Silicon Substrates Applications

The following are just some of the applications boron-doped silicon wafers are used in.

  1. Solar cells: Boron-doped silicon is used in photovoltaic cells to increase their efficiency and stability.

  2. Transistors: Boron-doped silicon is used in the fabrication of bipolar junction transistors and MOSFETs, which are essential components in electronics and computer systems.

  3. Diodes: Boron-doped silicon is used in the production of rectifying diodes, which are commonly used in power supplies and voltage regulation circuits.

  4. LED manufacture: Boron-doped silicon is used as the substrate material in the manufacture of LED chips, due to its high resistivity and stability.

  5. Microelectronics: Boron-doped silicon is widely used in the microelectronics industry for the fabrication of a wide range of electronic devices, including integrated circuits, memory chips, and microprocessors.

Boron-Doped Silicon Wafers

Boron-doped silicon substrates are used as a base material in the fabrication of semiconductor devices, specifically as a p-type doping material in the creation of p-n junctions. These junctions are crucial in the functioning of various electronic devices such as solar cells, transistors, and diodes. The addition of boron impurities to silicon allows for control of electrical conductivity and the creation of p-type semiconductors.