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Item
GY50d
Description
Silicon wafers, per SEMI, P/P 2"Ø×1,000±25µm, FZ Intrinsic undoped Si [100]±0.5°, Ro > 10,000 Ohmcm, Both-sides-polished, SEMI primary Flat (one):15.88±1.65mm @ 110±1°, Single wafer boxes, MCC Lifetime>1,000µs.
Price: Reference #266760. For GaP wafers click.
This page specifies the requirements of n-type silicon wafers, having crystal orientation
<100> & <111>, to be used in the manufacture of UV/Photovoltaic and other Silicon Photodetectors.
2 REQUIREMENTS
2.1 2" Wafer Specifications
Orientation: <100> Material growth method: Float zone Diameter: 50.8mm ±1mm
Dopant species: N-type/Phosphorous
Primary flat: Per SEMI standard Dislocation Density: 500/cm2 maximum Parallelism (Taper): 5mm maximum
Edges: Wafer edges to be machined to a rounded profile.
For lapped surfaces: Surface to be chemically etched sufficiently to remove damage. For Resistivity, Lifetime, Thickness and Finish requirements, see Table 1.
Item # | RES (W cm) |
LIFETIME (µ SEC.) | THICK (µm) |
Pol | |||||||||
1 | 300 ±10% | 1000 min. | 430 ±25 | Lapped & etched both sides | |||||||||
2 | 10±10% | 500 min. | 430 ±25 | Same as dash 1 | |||||||||
3 | 300±10% | 1000 min. | 405 ±25 | Lapped & etched one side, polished other side | |||||||||
4 | 300±10% | 1000 min. | 250 ±25 | Same as dash 3 | |||||||||
5 | 300±10% | 1000 min. | 300 ±10 | Same as dash 3 | |||||||||
6 | 300±10% | 1000 min. | 380 ±12 | Same as dash 1 |
2.2 4" Wafer Specifications a) GENERAL |
Lifetime: Per Table 2 for N <100> Per Table 3 for N <111> TABLE 2 |
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DASH # | MATERIAL GRADE | RESISTIVITY (W cm) |
LIFETIME (µ sec.) |
THICKNESS (µm) |
FINISH | |||||||||
10 | FZ-NTD | 300 ±10% | 300 min. > 600 typ. |
300 ±15 | Lapped & etched one side, polished other side | |||||||||
11 | FZ-NTD | 300 ±10% | 300 min. > 600 typ. |
400 ±15 | Same as dash 10 | |||||||||
12 | FZ-NTD | 300 ±10% | 300 min. > 600 typ. |
500 ±15 | Same as dash 10 | |||||||||
13 | FZ-HPS | 10 ±15% | 500 min. > 1000 typ. |
400 ±15 | Same as dash 10 | |||||||||
14 | FZ-HPS | 1 ±15% | 500 min. > 1000 typ. |
400 ±15 | Same as dash 10 | |||||||||
15 | FZ-NTD | 1,000 ±10% | 300 min. > 750 typ. |
400 ±15 | Same as dash 10 | |||||||||
16 | FZ-NTD | 1,000 ±10% | 300 min. > 750 typ. |
300 ±20 | Same as dash 10 | |||||||||
17 | FZ-NTD | 100 ±10% | 150 min. > 300 typ. |
400 ±15 | Same as dash 10 | |||||||||
18 | FZ-NTD | 300 ±10% | 300 min. > 600 typ. |
400 ±15 | Polished both sides | |||||||||
19 | FZ-NTD | 500 ±10% | 300 min. > 750 typ. |
400 ±15 | Same as dash 10 | |||||||||
20 | FZ-HPS | 5,000 ±30% | > 1,000 | 400 ±15 | Same as dash 10 | |||||||||
CAGE CODE CODE CAGE 6 9 2 7 6 |
NO. DE DOCUMENT/DOCUMENT NO. 2 5 7 5 5 2 6 REV FEUILLE DE SHEET 6 OF 8 10 |
TABLE 3
RESISTIVITY, LIFETIME, THICKNESS AND FINISH REQUIREMENTS [FOR N <111> -TYPE]
DASH # | MATERIAL GRADE | RESISTIVITY (W cm) |
LIFETIME (µ sec.) |
THICKNESS (µm) |
FINISH | |||||||||||||
30 | FZ-HPS | 1,000 ±25% | >1,000 typ. | 300 ±15 | Lapped & etched one side, polished other side |
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31 | FZ-HPS | 3,000 ±30% | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
32 | FZ- HPS | 5,000 ±30% | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
33 | FZ-HPS | 5,000 ±30% | >1,000 typ. | 250 ±15 | Polished both sides | |||||||||||||
34 | FZ-HPS | 7,500 ±30% | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
35 | FZ-HPS | 7,500 ±30% | >1,000 typ. | 250 ±15 | Same as dash 30 | |||||||||||||
36 | FZ-HPS | >10,000 <20,000 | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
37 | FZ-HPS | >10,000 <20,000 | >1,000 typ. | 250 ±15 | Same as dash 30 | |||||||||||||
38 | FZ-HPS | >10,000 <20,000 | >1,000 typ. | 200 ±15 | Same as dash 30 | |||||||||||||
39 | FZ-HPS | >10,000 | >1,000 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
40 | FZ-HPS | 300 ±10% | 300 min. >600 typ. |
300 ±15 | Same as dash 30 | |||||||||||||
41 | FZ-NTD | 1200–1650 | >2000 typ. | 400 ±15 | Same as dash 30 | |||||||||||||
42 | FZ-NTD | 1200-1650 | >300 typ. | 300 ±15 | Same as dash 30 | |||||||||||||
CAGE CODE CODE CAGE 6 9 2 7 6 |
NO. DE DOCUMENT/DOCUMENT NO. 2 5 7 5 5 2 6 REV FEUILLE DE SHEET 7 OF 8 10 |
3 CONFIGURATION AND QUALITY ASSURANCE PROVISIONS 3.1 Identification The packaging shall be marked, as a minimum, with the following: a) Manufacturer's name, trade mark, logo or code. b) Manufacturer's part/or MIL specification number, description and product trade name. c) Excelitas part number, (consisting of the seven figure drawing number). d) Any other identification requirement shall meet M1.12.2-94 SEMI specification. 3.2 Traceability/Certification a) Ingot, batch, log and material control references shall be supplied with the material. b) A Certificate of Conformance, signed by a cognizant and responsible company official (e.g. Head of Quality Control) shall be supplied with the material shipped verifying conformance to this specification and all other specifications invoked. Reference shall be given to the manufacturer's Ingot, batch or lot numbers and date codes of the subject material. c) For any process, material preparation, or testing that is not performed by the Vendor, the Vendor must identify (in the CFC) the external parties involved and the process steps handled by these parties. The Vendor must also disclose the date these process steps were performed and the full address and contact name of the external parties involved. d) Written approval must be obtained by Excelitas for any services provided by non ISO- 9001 qualified facilities. For any subcontract parties that are not ISO 9001/2 qualified, Excelitas also reserves the right to perform an inspection audit of their facilities in order to approve/qualify the services provided. e) Resistivity, lifetime, thickness, diameter and taper shall be measured on a sample basis and a test report supplied. Wafers used for these tests shall be packaged as per 4.0 c). Resistivity and lifetime of Ingot must also be measured along Ingot's length from which material lot/batch is shipped to Excelitas and plotted graph results supplied. f) A "Crystallographic Perfection" test report for Ingot from which material lot/batch is shipped to Excelitas must be supplied with batch shipped to Excelitas. This report must be signed by a cognizant and responsible company official. The "Crystallographic Perfection" test methods shall be in accordance with M1.9.13-94 SEMI specification. g) For any of applicable tests specified in 3.2 e) or 3.2 f) which can not be performed by Vendor (i.e. F416 "Oxidation Induced Defects") M1.11.2-94 SEMI specification shall apply. |
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