Inductively Coupled Plasma - Reactive Ion Etching (ICP-RIE)
What Substrate Should You Use for Nanofabrication?
ICP-RIE stands for Inductively Coupled Plasma-Reactive Ion Etching. It is a widely used nanofabrication technique in microelectronics and semiconductor industries for etching of thin films and patterns on substrate materials. ICP-RIE creates a high-density plasma using an inductively coupled RF (radio frequency) source to ionize a gas mixture. The ions are then accelerated towards the substrate surface to etch the material. The process is often used in conjunction with a reactive gas to achieve high selectivity and accuracy in etching desired patterns.
150mm Fused Silica and Sapphire have recently been used by university researchers for ICP-RIE system for nanofabrication.
Reference #270026 specs and pricing.
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Inductively Coupled Plasma - Reactive Ion Etching (ICP-RIE)
When you need to have high etch rates, then Inductively Coupled Plasma (ICP) etching is the go to method! It provides high selectivity and low damage processing. Plasma can be easily controlled at low pressures.
The following silicon wafer specs can be use for your ICP-RIE testing.
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| Item# | Dia | Type/Dop | Ori | Res ohm-cm | Thick | Polish | More |
| 2103 | 100mm | P/B | [100] | 0-100 | 500um | SSP | with 1,000nm of Thermal Oxide |
| 1922 | 100mm | P/B | [100] | 0.0001-0.005 | 500um | SSP | with 100nm of Super Low Stress LPCVD |
| 809 | 100mm | N/Ph | [100] | 1-10 | 500um | SSP |
Please let us know if you can use or if you have other specs that you would like quoted.
Below are some Reactive Ion Etching (ICP-RIE) that we have for sale.
TEGAL 903 CASSETTE TO CASSETTE RIE, CONFIGURED FOR 4" WAFERS |
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PLASMA SCIENCES R.I.E. 200W TABLE TOP REACTIVE ION ETCHER |
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OXFORD 80 REACTIVE ION ETCHER (R.I.E.) OPEN DESIGN ALLOWS FOR FAST LOADING |
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TECHNICS PEIIA PLASMA SYSTEM 3 GAS INPUTS (MANUAL CONTROLS) |
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PLASMA SCIENCES RIE 600W FOR 12" WAFERS 600 WATT POWER SUPPLY |