A Graduate Research Assistant from a ElectroScience Laboratory requested the folllowing quote:
We are interested in 2DEG and leakage characteristics of following of the listed samples.
Specifically, we need high electron density and low leakage with semi-insulating substrate for high frequency operations. (I would be interested in speaking to a technical person on this actually).
Please quote for following:
UniversityWafer, Inc. replied:
Yes, the properties of 4H-Silicon Carbide (4H-SiC) make it an excellent material for millimeter-wave (mm-wave) applications.
We have 100mm 4H SiC in Stock!
Reference # 214926 for specs and pricing.
Get Your Quote FAST! Or, Buy 4H SiC Online and start researching today!
A Research And Development Engineer
Do you still have this 3" 4H SI with delivery time for a week?
Or what size or kind of SI 4H
wafers do you have that needs
shortest lead time?
Are these high purity ones that
look colorless and transparent
compared to n-type or p-type
4H-SiC with dark color?
We use 4H-SiC wafers for photoluminescence measurements so we care about optical loss of the wafer.
N-type wafer I purchased with dark grey color seems to have low transmission for the wavelength of the laser we're using for excitation.
I heard the color is due to the iron impurities in fabrication process. So I'm wondering if semi-insulating wafers are high purity, colorless and transparent compared to N or P type wafers.
Do SI 4H-SiC substrates look as dark in color as N-type or P-type ones? Either way, could you email me the quotation for SI 4H-SiC for 1 piece? For now, we are only interested in 4H-SiC substrates and not 6H-SiC.
UniversityWafer, Inc. Quoted:
SI 4H-SiC substrates looks light in color as n type, please see below quotation:
3”, 4H, semi-insulating/V doped, double side polished.
2”, 4H, semi-insulating/V doped, double side polished.
Reference # 215725 for specs and pricing
A engineer from a startup requested the following quote:
I am seeking cost and lead-times for SiC and/or SiN substrates to address an high-volume opportunity in the photonics space which requires a low-CTE material. I like to share with you that the substrate is going to be used as support structure for our Additive Manufacturing process and not to build semiconductor devices, is there an email I could send the specs of the substrate?
We are interested in “mechanical” parameters like roughness, planarity etc (see attached file) and not in electrical parameters.
What we looking for are the Si, SiC and SiN substrates with the following specs.
Reference #253225 for specs and pricing
Silicon Carbide (SiC) is a wide-bandgap semiconductor material that has attracted tremendous attention from industry and academia because of its promising performance for high-power and high-frequency electronics, especially in terms of its high breakdown electric field, high operating temperature, and low intrinsic carrier concentration. However, despite its excellent properties, SiC-based devices still suffer from numerous challenges owing to the difficult-to-process surface of 4H-SiC. In particular, global and local planarization of 4H-SiC wafers is one of the major bottlenecks for the mass production of high-quality SiC devices. Several methods have been developed to improve CMP performance in order to achieve high quality of SiC wafers, including chemical, mechanical and chemical-mechanical synergistic approaches.
4H silicon carbide (4H-SiC) is a crystalline material that belongs to the family of wide-bandgap semiconductors. It is a compound composed of silicon (Si) and carbon (C) atoms arranged in a hexagonal crystal lattice structure. 4H-SiC is highly valued for its unique properties, making it suitable for fabricating semiconductor devices. Here are some advantages and disadvantages of using 4H-SiC:
Wide Bandgap: 4H-SiC has a wide bandgap of approximately 3.26 electron volts (eV), which is significantly larger than traditional semiconductors like silicon (1.1 eV). This wide bandgap allows for higher operating temperatures, better power handling, and reduced power losses compared to silicon-based devices.
High Thermal Conductivity: 4H-SiC has excellent thermal conductivity, approximately three times higher than silicon. This property enables efficient heat dissipation, which is crucial for high-power devices that generate significant heat during operation.
High Breakdown Field: 4H-SiC exhibits a high electric field strength at which it can maintain its insulating properties, known as the breakdown field. This characteristic enables the fabrication of devices that can handle high voltages without breakdown or failure.
High Electron Mobility: 4H-SiC has a high electron mobility, which refers to the ease at which electrons can move through the material when subjected to an electric field. High electron mobility allows for faster switching speeds and improved device performance.
Cost: Compared to silicon, 4H-SiC is more expensive to produce. The manufacturing processes and equipment required for fabricating 4H-SiC devices are currently more costly, limiting its widespread adoption in some applications.
Crystal Defects: The growth of large, high-quality 4H-SiC crystals can be challenging, leading to the presence of crystal defects. These defects can affect the performance and reliability of semiconductor devices fabricated from 4H-SiC.
Limited Infrastructure: The infrastructure for processing and handling 4H-SiC is not as developed as that for silicon. This lack of infrastructure can pose challenges in terms of equipment availability and manufacturing capabilities.
Despite these disadvantages, 4H-SiC offers significant advantages over silicon in certain applications, especially in high-power, high-temperature, and high-frequency devices. Ongoing research and development efforts aim to address the limitations and further enhance the performance and cost-effectiveness of 4H-SiC-based semiconductor devices.
4H Silicon Carbide (SiC), polytype is an advanced semiconductor material with several beneficial properties, such as high hardness, high thermal conductivity, and a wide bandgap. These properties make it ideal for many different applications, especially in electronics. Here are five examples:
Silicon Carbide (SiC) is used in additive manufacturing (AM), also known as 3D printing, primarily as a support substrate or build platform due to its excellent thermal and mechanical properties. Here's how:
While SiC is a promising material for these applications, its relatively high cost and the complexity of manufacturing SiC parts can be challenges that need to be overcome for widespread adoption in additive manufacturing.