We have previously used your 300nm silicon nitride covered silicon wafers (ID 1913) and they’re great! Would it be possible for you to get hold of some with a thicker layer of silicon nitride.
Nitride on Silicon Wafers Stoichiometric, Low & Super Low Stress
Nitride Coated Silicon Wafers Applications
A researcher asked:
Reference #209894 for specs/pricing.
LPCVD Nitride on Silicon to Fabricate Photonic Devices
A photonics design engineer requested pricing for their research project.
I am interested in getting a price quote for LPCVD Silicon Nitride on Insulator wafer(s) in small quantities ( likely less than 10 ). We would likely be interested in wafers with a refractive index of ~ 2.1, with a silicon nitride thickness of around 450nm or so on ~ 3um of wet thermal SiO2. Is this type of wafer something you provide? If not do you provide stoichiometric silicon nitride on insulator wafers?
6 inch diameter wafers would be ideal. The handle thickness is not that important, 525um - 725um or something is fine with an orientation of 100. The wafers should be LPCVD Silicon Nitride ( 400nm to 600nm thickness ) on 3um of wet thermal SiO2 on a Silicon Handle Wafer. They will be used for photonic devices so prime grade. As for quantity we would likely only need a few, definitely less than 10, say 1-5 in that range.
UniversityWafer, Quoted:
LPCVD Silicon Nitride on Insulator wafer(s),stoichiometric silicon nitride thickness of around 450nm or so on 2um of wet thermal SiO2.Qty. 10pcs
6in diameter wafers would be ideal. The handle thickness is not that important, 525um - 725um,orientation of 100. The wafers should be LPCVD Silicon Nitride ( 400nm to 600nm thickness ) on 2um of wet thermal SiO2 on a Silicon Handle Wafer.
From the past test result of similar stoichiometric silicon nitride,the refractive index of Si3N4 @ 1.95 - 2.05 @ 633nm,But,did not record the index at 1300 and 1550nm
Reference #271291 for more specs and pricing.
Buy Your Nitride Silicon Wafers Online and Save!
Stochiometric, low stress and super low stress nitride can be purchased online in quantities from just one wafer to thousands.
We have all diameters, from 25.4mm to 300mm avaialble. Below are just some of what we have in stock.
Get Your SiN Quote FAST and start researching today!
Silicon Nitride Wafers LPCVD - Buy Online
Ask for the Nitride wafers that we have in stock.
Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.
Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.
Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.
Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.
Fill out the form for an immediate quote.
Silicon Nitride Wafers LPCVD
Ask for the Nitride wafers that we have in stock.
Stoichiometric LPCVD Nitride - Our Standard nitride film works great as hard mask for KOH etching and can be used as a tool for defining active regions during field oxidation.
Our Low Stress Nitride retains all of the same benefits associated with our standard nitride but can also be used for Membranes, Cantilever Beams and other mechanical structures associated with MEMS devices.
Our Super low stress nitride has been developed for applications that require extremely low film stress. Film Stress can also be customized to meet your unique specifications.
Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.
Fill out the form for an immediate quote.
Silicon Nitride Wafers PECVD
Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: 600MPa Tensile
Refractive Index: 2.00
Temperature: 350C
Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.
Nitride Silicon Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: Variable
Refractive Index: 1.5-1.9 (Per customer request)
Temperature: 350C
Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: <250MPa
Refractive Index: 2.00
Temperature: 350C
Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films.
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2µm
Tolerance: +/- 7% or better
Film Stress: 400MPa Compressive
What is Silicon Nitride Refractive Index?
Refractive Index: 1.46
Temperature: 350C
PECVD Silicon Carbide for wafers requiring minimal thermal processing. Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films
Wafers Sizes up to 300mm
Capable of handling custom substrate shapes, sizes and materials
Thickness up to 2um
Tolerance: +/- 7% or better
Film Stress: <100MPa
Refractive Index: 2.73
Temperature: 350C
Nitride on Silicon Nitride (SiN) for Printed Electronics
Scientists have used the following substrates to research inkjet printing of graphene on silicon nitride for printed electronics.
SiN Item #1913
100mm P/B <100> 1-10 ohm-cm 500um SSP Prime Grade with 300nm of Standard LPCVD Nitride
Can You Deposit Nitride on Quartz Wafers?
The research client wanted Z-Cut Quartz with Super Low Stress Nitride.
"Z-cut quartz has a property of piezo-electric material which is sensitive to physical stress or thermal stress or shock. This means they will be extremely sensitive to rapid temperature change.
Unfortunately we cannot quote processing this material for risk of breakage due to exposure of temperature change."
What is the Silicon Nitride Dielectric Constant?
The dielectric constant of silicon nitride can vary depending on its exact composition and structure, as well as the frequency of the applied field. Generally, the dielectric constant of silicon nitride is in the range of 7 to 9 at room temperature for frequencies in the MHz range. However, precise values should be obtained from specific material datasheets or scientific literature, as this property can be influenced by many factors. As of my knowledge cutoff in September 2021, the dielectric constant of silicon nitride varies between these ranges, but for the most updated information, one should refer to recent research or material suppliers.
What is Silicon Nitride Refractive Index?
The refractive index of silicon nitride at a wavelength of 633 nm (often used as a standard reference) is typically around 2.0.
What is Silicon Nitride Etch?
Etching is a process used in microfabrication to remove layers from the surface of a wafer during manufacturing. Silicon nitride is often used as a mask or a protective layer during etching because it is highly resistant to many chemical etchants.
However, there are times when it is necessary to etch silicon nitride itself. There are two primary methods of doing this:
-
Wet Etching: Wet etching involves the use of liquid chemicals or etchants. Phosphoric acid is commonly used to etch silicon nitride in wet etching processes. The silicon nitride film is dipped into heated phosphoric acid, which reacts with and removes the silicon nitride layer. The etch rate can be controlled by adjusting the temperature and concentration of the acid.
-
Dry Etching: Dry etching involves the use of ions or reactive gases. In the case of silicon nitride, this is typically done using a process known as Reactive Ion Etching (RIE). The common gases used for dry etching of silicon nitride include fluorine-based gases like CF4 or SF6.
Both methods have their advantages and disadvantages. Wet etching is typically simpler and less expensive, but it provides less control over the etch profile and can be less selective. Dry etching, particularly when done using a technique like RIE, can provide very precise control and high selectivity, but it requires more complex equipment and processes.
LPCVD Nitride for RIE Etching
A Nanofab engineer requested a quote for the following:
"What silicon wafers are required for RIE etching process. Meanwhile, can you give me quotes for two types of substrates?
- nitride (100 nm, super low-stress LPCVD)/Si (500 micron)/nitride (100 nm, standard)
- nitride (100 nm, super low-stress LPCVD)/Si (500 micron)/SiO2 (300 nm, thermal)
* Other specs (for diameter, resistivity and etc.) are same as the product ID #1922 I'll decide what I need based on the price and discussion with a nanofab engineer."
Please reference # 213220 for specs and pricing.
What are the Property Differences Between Nitride?
A researcher requested the following:
"We would like to purchase some wafers from you. I have several questions to ask on your wafers. I saw you 
have different wafers of Nitride on Silicon. They seemed with different names as some are made of "Standard LPCVD Nitride", some are "Low Stress LPCVD Nitride", some are "Super Low Stress LPCVD Nitride". What's their property difference? Could you please inform me on it? (like maybe the Low pressure LPCVD Nitride are very easy to break down or something?) Also, I want to find some conductive silicon substrate (Single Side Polished), but maybe I'm not quite familiar and didn't find a good link. Could you please provide me a link on it?
I'm sending questions to ask about the Difference in LPCVD Nitride is because we need to cut the wafer with some dicer/cutter along with the <100> orientation. We want to ask whether this behavior (external mechanical force) will cause any cracks inside the silicon nitride layer (inside the cut pieces, not at the edge). Because we don't expect this thing to happen because if there are cracks inside the silicon nitride layer, then it would easy trap some charges and make the testing behavior not good. So I'm asking the properties of the Standard LPCVD Nitride, Low Stress LPCVD Nitride, Super Low Stress LPCVD Nitride, as we are not sure if the lower stressed ones are easy to form cracks during these cutting operations or not. Or would all these types of LPCVD Nitride survive perfectly without gaining any new cracks?"
UniversityWafer, Inc.Replied:
The following explains the different Silicon Nitride layers on Silicon wafers, that are available. Once you decide what you require then we can prepare price quotations.
The Stoichiometric Silicon Nitride is Si3N4. It is a smooth, hard and chemically inert layer. When grown or deposited on Silicon wafers, it matches the silicon crystal lattice, forming an Epi layer. But because of differences in lattice constants, after cooling, the Si3N4 layer is under considerable stress of about 1,000 MPa in tension. Consequently, it can be grown not more than 300nm thick. Grown thicker than 500nm, the layer is sure to crack like the surface of a dried up pond. Even at 300nm, the layer tends to deform the underlying Silicon wafer, especially if it is thinner than normal.
A Low-Stress Silicon Nitride is a blend of Si(x)N(y) compounds chosen to match the Silicon wafer lattice and therefore lower the residual stress to below 200MPa in tension. The layer is less smooth, less dense and less chemically resistant but it is still useful, and can be grown as thick as 2 or 3µm without cracking.
A Super Low-Stress Silicon Nitride is a more precise blend of Si(x)N(y) compounds chosen for a specific residual stress, such as between 100MPa in tension and 100MPa in compression, i.e. ±100MPa. This does not deform the underlying Silicon wafer at all.
Each of the above Silicon Nitrides can be applied by LPCVD (Low Pressure Chemical Vapor Deposition) or by PECVD (Plasma Enhanced Chemical Vapor Deposition).
Each of the two processes can grow/deposit a Silicon Nitride layer on Silicon wafers or on Silicon wafers with a thermally grown SiO2 layer.
LPCVD grows Silicon Nitride on both sides of the wafer whereas PECVD grows Silicon Nitride on only one side of the wafer.
PECVD is better suited to deposit thick layers (more than 1 or 2 µm thick) and LPCVD is better suited to grow thinner layers.
For us to quote, you need to specify the type of Silicon Nitride (Stoichiometric or Low-Stress) and in the case of Super Low-Stress Nitride, the residual stress limits. You need to specify the thickness of Silicon Nitride and if it is to be grown on one or both sides of the Silicon wafer. Note that each of the above processes treats at least 25 wafers at a time so that is effectively the minimum order quantity.
Nitride Coated Silicon Wafers for KOH Etching
"Hello, I"m interested in purchasing <110> DSP 100 mm Si wafers with a coating of nitride or oxide on both sides (this is for a deep KOH etch). Wafer #2538 with a nitride or oxide coating would be ideal. I need a minimum of 50 nm of nitride, or 700 nm of thermal oxide. Is this something you could do, and could be please give me a quote for both options? Thank you!"
Please reference #211398 for specs and pricing.
50.8mm (2 Inch) LPCVD Nitride on Silicon Wafers
Below are just some of the SiN wafers that we have available.
| ID | Diam | Type | Dop | Orien | Res (Ohm-cm) | Thick (um) | Polish |
100nm Stoichiometric LPCVD Nitride |
|||||||
| 3307 | 50.8mm | P | B | <100> | 0.001-0.005 | 270um | SSP |
| 3546 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
| 3538 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
620nm LPCVD Nitride |
|||||||
| 3445 | 50.8mm | P | B | <100> | 0-100 | 500um | DSP |
300nm Stoichiometric LPCVD Nitride |
|||||||
| 3547 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
| 3539 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
100nm Low Stress LPCVD Nitride |
|||||||
| 3540 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
| 3548 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
| 3547 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
300nm Low Stress LPCVD Nitride |
|||||||
| 3541 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
| 3549 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
2,000nm Low Stress LPCVD Nitride |
|||||||
| 3542 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
| 3550 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
100nm Super Low Stress LPCVD Nitride | |||||||
| 3543 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
| 3551 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
300nm Super Low Stress LPCVD Nitride |
|||||||
| 3544 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
| 3552 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
2,000nm Super Low Stress LPCVD Nitride |
|||||||
| 3545 | 50.8mm | P | B | <100> | 1-10 | 280um | SSP |
| 3553 | 50.8mm | N | P | <100> | 1-10 | 280um | SSP |
76.2mm (3 inch) Nitride on Silicon
| ID | Diam | Type | Dopant | Orien | Res (Ohm-cm) | Thick (um) | Polish | Grade | Description |
| 3446 | 76.2mm | <111> | 250um | DSP | Test | w/ 200nm Low Stress Nitride | |||
| 3480 | 76.2mm | ANY | ANY | <100> | 250um | DSP | Test | w/ 200nm Low Stress Nitride | |
| 3554 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 100nm Standard LPCVD Nitride |
| 3555 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 300nm Standard LPCVD Nitride |
| 3556 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 100nm Low Stress LPCVD Nitride |
| 3557 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
| 3558 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
| 3559 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
| 3560 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
| 3561 | 76.2mm | P | B | <100> | 1-10 | 380um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
| 3562 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 100nm Standard LPCVD Nitride |
| 3563 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 300nm Standard LPCVD Nitride |
| 3564 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 100nm Low Stress LPCVD Nitride |
| 3565 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
| 3566 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
| 3567 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
| 3568 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
| 3569 | 76.2mm | N | P | <100> | 1-10 | 380um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
100mm (4 Inch) Nitride on Silicon
| ID | Diam | Type | Dopant | Orien | Res (Ohm-cm) | Thick (um) | Polish | Grade | Description |
| 1911 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | w/ 100nm of Standard LPCVD Nitride |
| 1912 | 100mm | P | B | <100> | 0.001-0.005 | 500um | SSP | Prime | with 100nm of Standard LPCVD Nitride |
| 1913 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 300nm of Standard LPCVD Nitride |
| 1915 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 100nm of Standard LPCVD Nitride |
| 1917 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 100nm of Low Stress LPCVD Nitride |
| 1919 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 100nm of Low Stress LPCVD Nitride |
| 1921 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
| 1922 | 100mm | P | B | <100> | 0.001-0.005 | 500um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
| 2898 | 100mm | N | P | <100> | 1-10 | 500um | DSP | Prime | with 100nm Low-Stress LPCVD Nitride |
| 3455 | 100mm | P | B | <100> | 1-10 | 500 | SSP | Prime | with 500nm Low Stress LPCVD Nitride |
| 3570 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
| 3571 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
| 3572 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
| 3573 | 100mm | P | B | <100> | 1-10 | 500um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
| 3574 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 300nm Standard LPCVD Nitride |
| 3575 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
| 3576 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
| 3577 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
| 3578 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
| 3579 | 100mm | N | P | <100> | 1-10 | 500um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
150mm (6 Inch) Nitride on Silicon
| ID | Diam | Type | Dopant | Orien | Res (Ohm-cm) | Thick (um) | Polish | Grade | Description |
| 3580 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 100nm Standard LPCVD Nitride |
| 3581 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 300nm Standard LPCVD Nitride |
| 3582 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 100nm Low Stress LPCVD Nitride |
| 3583 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 300nm Low Stress LPCVD Nitride |
| 3584 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 2,000nm Low Stress LPCVD Nitride |
| 3585 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 100nm Super Low Stress LPCVD Nitride |
| 3586 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 300nm Super Low Stress LPCVD Nitride |
| 3587 | 150mm | P | B | <100> | 1-100 | 625um | SSP | Prime | with 2,000nm Super Low Stress LPCVD Nitride |
What is the Crystallographic Structure Phases of Silicon Nitride
Below is a typical Q&A before an order is placed.
Researcher:
I would like to request a quote for Silicon Nitride on Silicon Wafers with the following specs: - wafer size 2" - SiN thickness 300 nm - quantity 10 pcs As I know, silicon nitride has three crystallographic structure phases (α, β, and γ) and film stress could be controlled in a wide range. Could you provide information on the crystallographic structure phases of silicon nitride that you have?
We want to test epi-silver growth on top of the silicon nitride. Ideally, epitaxial metal should be grown on a lattice-matched crystalline substrate. But, the mismatch could take place and small values are acceptable, or higher-order lattices and stress can work. Since silicon nitride has three crystallographic structure phases (α, β, and γ) and film stress could be controlled in a wide range we want to try different SiN wafers for the epi-silver growth. For this, I would like to know if you can provide SiN with different crystallographic structure phases (or have any information about the crystal structure of the SiN). Also, we want to have wafers with different SiN film stress. Beyond this, we don't have other specs for wafers at this point.
The wafer size - 2" SiN thickness - 300 nm Different stress levels Diffrerent rystallographic structure phases Could you provide more information in this respect so that I could narrow down my request?
UniversityWafer Answer:
We have: 2" SSP Silicon
SiN thickness - 300 nm(no crystallographic structure)
To minimize wafer deformation when Silicon Nitride film is deposited, we recommend double-side-polished wafers and wafers thicker than normal.
If you plan to grow Epi layers on top of the Nitride layer, then you need a layer of stoichiometric Si3N4. Because of lattice mismatch, the stoichiometric Nitride layer will have a stress of about 1,000 MPa in tension (we guarantee stress >800 MPa in tension). This is such a large stress that layers > 500nm thick are impossible for they will crack. This stress will also deform the wafer, which is why we recommend double-side-polished wafers and wafers thicker than normal.
One can control or eliminate this stress or even turn it into compressive stress, by depositing a mix of Silicon Nitrides, with larger proportion of Silicon atoms than the stoichiometric 3:4. We can do that both in LPCVD and in PECVD reactors. However, that decreases the crystalinity of the Nitride layer which seems counter to your objective.
I do not know which Si3N4 crystal polymorph is created in LPCVD. It is certainly not γ . It is likely β or a mixture of α and β. That is not something that is routinely measured.
Note: The Nitride film is deposited in a reactor that processes 25 wafers at a time. It costs as much to process 25 wafers as to process 1. Hence, 25 wafers is effectively the minimum order quantity.
You can use thicker or thinner Silicon wafers, or even one-side-polished wafers (if you see fit), with corresponding price adjustments.
What Wafer Spec are Use to Fabricate Membrane-Based Nanocalorimeter Devices?
A scientist contacted us regarding a Nitride on SIlicon wafer quote.
I would like to request a quote for Silicon Nitride on Silicon wafers with the following specs: wafer size- 4" or 6" (whichever is cheaper); SiN thickness - 150 nm or 200 nm; quantity - a minimum quantity that cost less. We are currently in the process development stage so if any test wafers are available that cost less, that will be great to start with and if not, could you provide more information in this respect so that I could narrow down my request? We are using the wafers for the following process: s: I am working on developing a membrane-based nanocalorimeter device to measure the thermal properties of various thin-film materials. The initial process requires having a thin film membrane of SiN (~100 um x 100um x 200 nm) on a silicon wafer chip ( 3mm x 3mm x 200 um). These dimensions are not fixed but are near about the range that could be part of the final design so I included them to just give an idea. The reason for such small dimensions is to have a minimum mass contribution in the whole design process so as to reduce the background thermal contribution specifically heat capacity.
UniversityWafer, Inc. Quoted
Wafer size- 4" SSP SiN thickness - 150 nm or 200 nm
Please contact us for pricing.
What Silicon Wafer Spec is Used Electro-Luminescent (EL) Research
The wafer is used for Electro Luminescent (EL) research. The EL is emitted from porous segment.
A wafer which is extremely low-etch-rate of HF is needed to make a porous segment.
Thick-film EL panels applications include back-lights for LCD vehicle displays. They benefit the environement by not containing mercury.
Diameter : 4 inch
Resistance : 1-10 ohm-cm
Orientation : 100
SSP thickness standard
SiO2 - thermal oxidation
Thickness of SiO2 - 800 nm
Silicon nitride - extremely low etch rate of HF
Thickness of silicon nitride - 200 nm
Please contact us for pricing.
Silicon Nitride Roughness Value
A scientist requesd a SiN quote.
Researcher:
Since the fabrication process is critical and it requires the RMS surface roughness values of the nitride to be <0.5nm I must request for a certificate or analysis results (such as AFM scan) proving that the surface roughness RMS values are <0.5nm. Also I would like to know some additional parameters of the Si3N4 layer such as the Refractive index, Density, Poisson’s ratio, Young’s modulus, stress value, thickness and total thickness variation. If you can provide me with such information and somehow certify the surface roughness, then I would be glad to start the ordering process.
UniversityWafer, Inc. Quoted the following:
Si + nitride
<100>
100mm (4’’)
Double Side Polished
Thickness ~350um +100nm (or +50nm) Nitride
RMS surface roughness of nitride <0.5nm
What Kind of Nitride Works Best for Photonic Integrated Circuits?
A Postdoctoral Fellow requested a quote for the following:
We are looking to purchase five, four-inch SiN on insulator wafers with a SiN thickness of 330nm and a box layer of 3-5um, for use in visible light (500-800nm) photonic integrated circuits. It would be great if you could recommend between your stoichiometric, low stress, or super low stress options for our application, and provide a quote.
For photonic integrated circuits (PICs) operating in the visible light range of 500-800nm, the choice of nitride specification depends on your specific requirements. Here's a recommendation based on the options you mentioned: stoichiometric, low stress, or super low stress.
-
Stoichiometric Nitride: Stoichiometric nitride, with its balanced composition of nitrogen and metal atoms, can work well for PICs operating in the visible light range. It offers good optical properties and can support efficient light generation, transmission, and detection within this wavelength range. Stoichiometric nitride is a versatile option suitable for a wide range of visible light applications.
-
Low Stress Nitride: Low stress nitride can be beneficial for reducing strain-induced optical losses and improving device performance, even in the visible light range. By minimizing stress within the material, it helps maintain the integrity of the PICs and their optical components. This specification is particularly useful when low stress levels are desired to achieve high-quality optical performance.
-
Super Low Stress Nitride: Super low stress nitride, with its emphasis on minimizing stress, can also be a viable option for PICs operating in the visible light range. Although the visible light spectrum is relatively less susceptible to stress-induced effects compared to shorter wavelengths, super low stress nitride can still provide enhanced stability and consistency in optical performance.
In summary, stoichiometric nitride is a versatile choice suitable for a wide range of visible light applications. If stress reduction is a priority, low stress or super low stress nitride can be considered, depending on the level of stress mitigation required for your specific PIC design and fabrication processes. It's advisable to consult with materials experts or refer to specialized literature for further guidance tailored to your application's needs.
Reference #276127 for specs and pricing.