We are waiting to hear on an NSF SBIR grant in the next month or two. We need 100 150 mm x 0.675 mm R-plane sapphire SSP for Growth of epi ferroelectric films.
6 Inch Sapphire Wafers for Research and Production
6 Inch Sapphire to Grow Epi Ferroelectric Films
A government grant recipient requested the following quote:
Reference #225154 for specs and pricing.
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6 Inch Sapphire to Grow Gallium Nitride Structures
A materials research scientist requested a qutoe for the following:
Our group is growing GaN-based structures and as such we help to set up exploratory grant applications, one of which is to grow GaN structures on thick sapphire. I was pleased to see you have 25 of 1 mm thick 6" sapphire wafers in stock. Before I ask you to prepare a quotation could you tell me what the price is for 5 and 10 wafers? Since the grant still needs approval, we are not yet at the stage to place an order. Size(inch) 6" Orientation C-M 0.2deg Thickness 1000+/-25um Surface SSP Wafer Grade Prime,Epi-ready Looking forward to your reply.
UniversityWafer, Inc. Quoted:
Size(inch) 6" , Orientation C-M 0.2deg, Thickness 1000+/-25um Surface DSP Wafer Grade Prime, Epi-ready.
Packaging: Individually packed in single wafer cassette
Reference #261374 for specs and pricing.
What are Gallium Nitride Stuctures?
Gallium Nitride (GaN) is a binary III/V direct bandgap semiconductor commonly used in light-emitting diodes (LEDs) since the 1990s. The compound is a hard material that has a Wurtzite crystal structure. It's a key material in the fabrication of highly efficient electronic and optoelectronic devices.
The primary structure of Gallium Nitride is the Wurtzite structure. The Wurtzite crystal structure is characterized by a hexagonal unit cell. In the case of GaN, Gallium atoms and Nitrogen atoms form two interpenetrating hexagonal close-packed sub-lattices, slightly displaced from each other.
In terms of its practical applications, Gallium Nitride's structures are significant for various electronic devices such as high electron mobility transistors (HEMTs) and diodes. Because GaN has a direct bandgap, it can emit light efficiently in the ultraviolet to visible range, which makes it highly useful in the manufacture of LEDs and laser diodes. Additionally, due to its wide bandgap, GaN devices can operate at higher voltages and temperatures than silicon devices, making it a crucial material in power electronics.
Gallium Nitride can also be grown in a cubic crystal structure, which is less stable than the Wurtzite form but has advantageous properties for certain applications. For example, cubic GaN has a smaller bandgap, which makes it more suitable for green and yellow LEDs.
The exploration of Gallium Nitride and its structures is an active field of research in materials science, electronics, and photonics.