Silicon Carbide (SiC) Substrates for Epitaxy

SiC Epitaxy Thickness

A PhD student requested the following information:

Let me know if your SiC are epitxial wafers? If yes, let me know thickness and resistivity of SiC epitaxial layer and thickness and resistivity of SiC.

UniversityWafer, Inc. Quoted:

We can supply both SiC substrate and SiC epitaxy wafer
Then the SiC epitaxial wafer: epitaxial layer thickness vary from 1~30um,Resis. 0.013~0.028 Ohm.cm Substrate of SiC thickness 350+/-25um,Resis. the same as epitaxial layer 0.013~0.028 Ohm.cm

Reference #248084 for specs and pricing.

Get Your Quote FAST! Or, Buy Online and Start Researching Today!

Your Name:

Company:

Your email:

Your message:

Send

What is the SiC Epitaxy Standards for Defects and Contaminations?

A graduate materials science student requested the following:

I would like to have your help to understand better what is the standard acceptance level for SiC epitaxy wafers in terms of defects and contaminations regards to Production grade and R&D grade. It will help my thesis and also my Master's degree. 

Reference #275863  for specs and quantity.

 

 

 

What is Silicon Carbide (SiC) Epitaxy?

Silicon carbide (SiC) epitaxy refers to a specialized process used to grow high-quality, crystalline layers of silicon carbide on a substrate, typically for use in semiconductor devices. So, why do we care about this whole process? Well, when making gadgets like electronics and stuff that uses light signals (optoelectronic devices), silicon carbide becomes super crucial because of its unique characteristics.

Here's a simplified explanation of the process:

1. Selection of Substrate: The process starts with a silicon carbide substrate, which is a thin slice of silicon carbide crystal. This base, a thin slice of silicon carbide crystal, serves as the starting point where more layers of the same material will be meticulously added.

2. Preparation of the Substrate: The substrate surface is meticulously cleaned and prepared to ensure that it's free of any contaminants or defects that could affect the quality of the epitaxial layer.

3. Epitaxial Growth: Using techniques like Chemical Vapor Deposition (CVD), additional layers of silicon carbide are grown on the substrate. In CVD, a mixture of gases containing silicon and carbon elements is introduced into a reaction chamber. When these gases come into contact with the heated substrate, a reaction occurs that deposits a layer of silicon carbide on the substrate.

4. Control of Conditions: The quality of the epitaxial layer is highly dependent on factors such as temperature, pressure, gas flow rates, and the chemical composition of the gases used. These conditions are precisely controlled to ensure that the resulting layer has the desired properties.

5. Doping: During the epitaxial growth process, dopants (impurities) can be introduced to modify the electrical properties of the silicon carbide layer. This process is key in the creation of diverse semiconductor gadgets.

6. Characterization and Testing: After the epitaxial layer is grown, it undergoes various tests to assess its quality, thickness, crystalline structure, and electrical properties.

Epitaxy of silicon carbide plays a key role in crafting devices like power electronics and radio frequency units, especially those that need to withstand high power, intense frequencies or extreme temperatures. Given its knack for performing under intense scenarios, this stuff's a hot pick over your everyday silicon when it comes to specific applications.

6H SiC Epitaxy Substrates

A postdoctoral student requested the following quote:

We would like to buy a few quantities of thin film (50nm-500nm is better) 6H-SiC (3C-SiC is best) chips or small wafers to detect the luminescence of the material. Actually, we need a product of fluorescent 6H-SiC epitaxy. You could please provide me the quote of following: 2’’ SiC Specification_SI-type_2-6H-SI wafer Material : High Purity Single Crystal Silicon Carbide Polytype : Single-Crystal 6H Undoped Bandgap : <3.03eV Thank you!!

UniversityWafer, Inc. Quoted:

2’’ SiC Specification_SI-type_2-4H-SI wafer Material : High Purity Single Crystal Silicon Carbide Polytype : Single-Crystal 4H Undoped Bandgap : <3.03Ev, 350um, double side polished.

Reference #259575 for pricing.

What is the Importance of Low Defect Density of Silicon Carbide Substrates?

The low defect densityin silicon carbide (SiC) substrates is critically important for several reasons, particularly in the fields of electronics and photonics. Here are the key aspects of its importance:

1. Improved Device Performance: Low defect density in SiC substrates leads to better performance of the devices fabricated on them. In essence, if there are any defects in your device, they can disrupt the electron flow and cause them to clump together or vanish completely - a real party pooper for your gadget's efficiency. Less defects mean your carriers zip along faster and the electricity flows smoother, key features for rocking semiconductor devices.

2. Higher Power Efficiency: SiC is often used in high-power applications. Having fewer flaws makes sure our gear can handle more power and do it better. Power electronics used in electric vehicles, renewable energies, and power grids need high defect density to let the devices operate at higher voltages and currents with improved efficiency.

3. Increased Reliability and Longevity: Defects in semiconductor substrates can lead to failure points in devices. By reducing the defect density, the reliability and lifespan of the semiconductor devices are significantly enhanced. This stuff's critical, especially when it comes to things like space gear or medical equipment - because let's face it, nobody wants a high-stakes glitch in those scenarios.

4. Better Heat Dissipation: SiC has excellent thermal conductivity, and a low defect density helps in maintaining this property. In high-power and high-frequency gadgets, it's super crucial to get rid of heat effectively. If not, the excess heat could mess with performance or even cause total failure.

5. Reduced Leakage Currents: Defects can lead to leakage currents in semiconductor devices, which can be a significant issue in power devices. Having fewer defects really helps cut down on those pesky leakage currents, boosting the efficiency of our devices big time.

6. Enhanced Optical Properties: For photonic applications, the optical clarity and quality of SiC are paramount. Having a low number of defects is key to making sure SiC shines brightly in stuff like LEDs and lasers, right? It's all about that top-notch optical quality.

7. Scalability and Yield Improvements: In the manufacturing process, substrates with lower defect densities can lead to higher yields, as fewer chips are lost due to defects. For affordable mass production, the capacity to ramp up is a game-changer.

8. Compatibility with Advanced Device Architectures: As semiconductor devices become more complex and smaller (following Moore's Law), the tolerance for defects decreases. To make next-gen computing and communication systems work like a charm, we absolutely need substrates with super low defect density - it's essential for crafting advanced tech devices.

So, to break it down, what really makes SiC substrates a go-to for cutting-edge electronic and photonic tech is their low defect density - this trait ramps up the performance, reliability, and efficiency of semiconductor devices used in all sorts of high-tech fields.