Indium Gallium Phosphide (InGaP)

university wafer substrates

Question About customization HBT Heterojunction Bipolar Transistor (HBT)

A PhD candidate requested a qutoe for the following:

I found that UniversityWafer.com can supply customized InGaP/GaAs HBT. I want to ask some questions. Does that mean you can make HBTs according to my specs? What is the minimum piece number of my order? What is the minimum price for one order? I would appreciate it if you could give me a rough estimate so I can talk with my colleagues. 

As the first approach, I want to make a germanium-silicon-silicon transistor. The design is listed as follows. Please give me a quota. Many thanks!

Substrate: p-Silicon 1"
Epi layer 1: Collector contact,100 nm, n+ silicon with 1x10^20/cc doping.
Epi layer 2: Collector, 500 nm, n- silicon with 1x10^16/cc doping.
Epi layer 3: Base, 50 nm, p+ silicon with 1x10^15/cc doping.
Epi layer 4: Emitter, 150 nm , n- germanium with 1x10^18/cc doping.
Epi layer 5: Emitter cap, 100 nm, n+ germanium with 1x10^20/cc doping.
The contact metal use aluminum.

Reference # 275968 for specs and pricing.

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Company:

I want to buy a heterojunction bipolar transistor (HBT) such as InGaP/GaAs/GaAs. Does Universitywafer make customize transistor?

As the first approach, I want to make a germanium-silicon-silicon transistor. The design is listed as follows. Please give me a quota. Many thanks!

Substrate: p-Silicon 1"
Epi layer 1: Collector contact,100 nm, n+ silicon with 1x10^20/cc doping.
Epi layer 2: Collector, 500 nm, n- silicon with 1x10^16/cc doping.
Epi layer 3: Base, 50 nm, p+ silicon with 1x10^15/cc doping.
Epi layer 4: Emitter, 150 nm , n- germanium with 1x10^18/cc doping.
Epi layer 5: Emitter cap, 100 nm, n+ germanium with 1x10^20/cc doping.
The contact metal use aluminum.

Where Would You Find InGaP (Indium Gallium Phosphide)?

Indium Gallium Phosphide (InGaP) is a semiconductor material. Here's where you might typically find or encounter it:

  1. Electronic Devices: InGaP is often used in electronic devices due to its excellent electronic properties. It can be found in high-frequency and high-power electronics.

  2. Solar Cells: InGaP is used in multi-junction solar cells. These are high-efficiency solar cells where multiple layers of different semiconductor materials are used to capture a broader spectrum of sunlight. InGaP is typically used as the top layer to capture the high-energy photons from the sun.

  3. LEDs: InGaP is also used in the manufacture of light-emitting diodes (LEDs), especially those that emit red, orange, and yellow light.

  4. Laser Diodes: InGaP is used in the production of some types of laser diodes.

  5. Research Laboratories: Researchers working on semiconductor materials and devices often use InGaP in their studies.

  6. Manufacturing Facilities: Facilities that produce semiconductor devices will often have InGaP, especially if they produce the devices mentioned above.

  7. Heterojunction Bipolar Transistors (HBTs): InGaP is commonly used as an emitter material in GaAs-based HBTs.

It's worth noting that while InGaP has these applications, the raw material isn't something you'd typically encounter in everyday life unless you work in a related field or industry.

What is InGap Lattice Constant

The lattice constant of a crystalline material describes the distance between adjacent unit cells in the crystal structure. The lattice constant is a crucial parameter when considering the epitaxial growth of one material on another, as a significant mismatch can lead to defects in the grown layer.

For Indium Gallium Phosphide (InGaP), the lattice constant varies based on the composition of the material, specifically the ratio of indium (In) to gallium (Ga). Pure gallium phosphide (GaP) and indium phosphide (InP) have different lattice constants, and InGaP will have a value in between these two, depending on its exact composition.

To give some reference:

  • The lattice constant of pure GaP is approximately 5.4505 Å (angstroms).
  • The lattice constant of pure InP is approximately 5.8687 Å.

For a specific InGaP alloy composition (defined by the ratio of In to Ga), you'd interpolate between these values. In practice, the exact lattice constant for a given InGaP composition would be determined experimentally or sourced from detailed material property tables. If you have a specific In:Ga ratio in mind, I can provide a more precise estimate. However, for the most accurate data, you'd want to consult specialized literature or databases on semiconductor materials.

What is the Ratio between In and Ga?

A researcher requested a qutoe for the following:

We want GaP thin film on GaAs substrate. The GaP is grown on the GaAs substrate. Usually the thickness of GaP we need is about 300~500nm. The crystal orientation and doping don't matter. Do you have this kind of wafer?

UniversityWafer, Inc. Replied:

The GaP of this thickness cannot be grown in good quality due to lattice mismatch. InGaP layer could be grown lattice matched, with thickness of 500nm at GaAs substrate.

May I know the ratio between In and Ga? Is it In0.5-Ga0.5-P? And also the price and production time of it. Besides, could you also let me know if the other thickness of InGaP is possible on GaAs substrate?(e.g. 400nm or 300nm).

  1. Ratio between In and Ga: The notation "In0.5Ga0.5P" suggests that the ratio of indium (In) to gallium (Ga) is 1:1, or 50%:50%. This is a ternary alloy, so the concentrations of the three elements (In, Ga, and P) should sum up to 100%. If In and Ga are each 50%, then phosphorus (P) would make up the remaining percentage.

  2. Price and Production Time: As of my last update in January 2022, I don't have real-time pricing or current production times for In0.5Ga0.5P. These values can vary based on a variety of factors, including market demand, raw material costs, supplier, purity, and other specifics related to the production process. If you need up-to-date pricing and lead time details, I recommend reaching out to suppliers or manufacturers specializing in semiconductor materials.

  3. Thickness of InGaP on GaAs substrate: In general, varying thicknesses of epitaxial layers like InGaP on a GaAs substrate are possible. The exact thickness you can achieve is largely dependent on the specific Metal Organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) growth conditions and equipment. Commonly requested thicknesses for specific applications include 400nm, 300nm, and even thinner. Adjusting the growth parameters during the epitaxial deposition process can control the thickness of the layer. It's essential to consult with the substrate and epitaxy provider to discuss the specific requirements and ensure that the desired thickness and material quality can be achieved.

In summary, yes, a 400nm or 300nm thickness of InGaP on a GaAs substrate should be achievable, but the exact capabilities might vary based on the equipment and growth conditions used by a specific provider.

Reference #277865 for specs and pricing.

Indium Gallium Phosphide Carrier Concentration

A PhD Student requested the following qutoe:

We are looking for 2 pieces of n-type InGaP wafers of different carrier concentrations(~10^16 and 10^17). Could you please send me what do you have in stock and the price?

Reference #268974  for specs and pricing.

InGaP Used to Fabricate Solar Cells

An Intern requested the following:

I am working on a research project at Purdue University for a summer internship and I am looking for 2-3 GaAs solar cells to test their durability against radiation.

UniversityWafer, Inc. Quoted:

We can provide GaInP/InGaAs/Ge solar cells.

Item   Qty.   Description
HT51. 3   InGaP/InGaAs/Ge type Concentrator
                  Photovoltaic Cells
                  Size: 10*10 mm²

Reference #267466 for specs and pricing.

Epi-Grown InGaP on GaAs Wafers

A chemistry professor researching Nanobiophotonics

I have seen that you offer epi-grown InGaP on GaAs wafers? This may be useful for some processing development in my team. It would be useful to have an idea of cost here? Ideally, I would be looking at 180-200nm thickn InGaP but we could work with thinner if need be. Ideally 2" wafers, but again can be flexible.

We work with epitaxially grown MQW structures here. These end in InGaP. For process development it would be very useful to have access to the same surface (ie InGaP) without having to sacrifice our ultra-expensive quantum well wafers. These means quite low specs, certainly no strict requirements for mobility etc.
Would be great to have an approximate price point, eg for 10 wafers of 2" dia.

UniversityWafer, Inc. Quoted:

Pls see below for the offer on required InGaP on GaAs Wafer

epi-grown InGaP on GaAs wafers,180-200nm thickn InGaP on GaAs,Dia. 2" wafers,Qty. 10 wafers of 2" dia.

Reference #269468 for specs and pricing.

Indium Gallium Phosphide Cell for Photovoltaic Purposes

A corporate researcher asked for help with the following project:

I am currently putting together a grant budget proposal (2023) in which the research experiment calls for an InGaP/GaAs cell for photovoltaic purposes. The cell we are hoping to utilize would be no larger than 14mm in length/diameter. Is there an estimated quote on how much the said wafer would cost and what the lead time would be for the product? I look forward to hearing back, thank you!

Reference #264241 for specs and pricing.

Indium Gallium Phosphide Epi-Wafer Structure for Multi-Junction Solar Cells

A Postdoc requested the following quote:

Kindly quote best price and delivery time as per enquiry as follows: – asap. TQ

Epi-wafer structure for multijunction solar cell

1-14 inch wafer diameter

1-2Quantity: 30 pcs

1-3Epi structures are as below:

1-4Layer 15: N-InGaAs, Thickness: 420-570nm

1-5Layer 14: N-AlInP, Thickness: 20-60nm

1-6Layer 13: N-InGaP, Thickness: 110-130nm

1-7Layer 12: P-InGaP, Thickness: 590-730nm

1-8Layer 11: P-AlInP, Thickness: 50-150nm

1-9Layer 10: P-AlGaAs, Thickness: 15-30nm

1-10Layer 9: N-InGaP, Thickness: 15-30nm

1-11Layer 8: N-AlInP, Thickness: 100-200nm

1-12Layer 7: N-InGaAs, Thickness: 100-200nm

1-13Layer 6: P-InGaAs, Thickness: 3150-3850nm

1-14Layer 5: P-InGaP, Thickness: 90-110nm

1-15Layer 4: P-GaAs, Thickness: 15-30nm

1-16Layer 3: N-GaAs, Thickness: 15-30nm

1-17Layer 2: N-InGaAs, Thickness: 300-500nm

1-18Layer 1: N-nucleation/Buffer, Thickness: 10-50nm

1-19Layer 0: P-type Ge Substrate, Thickness: 150-200um

Reference #126759 for specs and pricing.

What are Indium Gallium Phosphide (InGaP) Nanowires?

Indium Gallium Phosphide (InGaP) nanowires are nanostructures made up of InGaP with dimensions on the nanoscale, typically in the form of elongated cylinders. "Nano" generally refers to structures with dimensions in the range of 1 to 100 nanometers. Nanowires are one-dimensional nanostructures, meaning they have one dimension (length) that is significantly larger than the other two (width and height).

Here are some key points about InGaP nanowires:

  1. Synthesis: InGaP nanowires are typically synthesized using methods like vapor-liquid-solid (VLS) growth, where a catalyst particle, often gold (Au), assists in the nucleation and growth of the nanowire from a vapor precursor.

  2. Applications:

    • Photonics and Optoelectronics: Due to their direct bandgap and the ability to control their optical properties, InGaP nanowires can be used in photonic devices like lasers, photodetectors, and solar cells.
    • Electronics: Their small size and high surface-to-volume ratio can make them interesting for electronic applications, such as field-effect transistors (FETs).
    • Sensors: The high surface-to-volume ratio also makes them potentially useful for sensing applications, as even a small amount of material adsorbed onto the surface can significantly alter their properties.

  3. Tunable Properties: By adjusting the growth conditions and the ratio of indium to gallium, researchers can fine-tune the properties of InGaP nanowires. This allows for customization based on the intended application.

  4. Heterostructures: InGaP nanowires can be combined with other semiconductor materials to create nanowire heterostructures. These heterostructures can have unique properties that are different from the individual materials and can be used to create more complex devices.

  5. Research: As of my last update in January 2022, InGaP nanowires, like other semiconductor nanowires, are a topic of active research. Scientists and engineers are investigating their properties, potential applications, and ways to synthesize and manipulate them more effectively.

In summary, InGaP nanowires represent a fascinating intersection of nanotechnology and semiconductor physics, with potential applications in various advanced technologies.